Pohang University of Science and Technology · Engineering
Dae Sung Chung 교수의 연구실은 주로 나노결정체 기반 유기 및 무기 반도체 소자에 초점을 맞추고 있으며, 특히 솔루션 프로세싱 가능한 고성능 전계효과 트랜지스터와 광다이오드를 개발하고 있습니다. 주요 연구 방향은 나노결정체의 표면화학 제어, 전하 수송 및 고정 메커니즘 분석, 그리고 환경 친화적이고 지속 가능한 반도체 재료(예: 페로브스카이트, 케이로히드라이드, 셀레니드/티오화합물 기반)의 합성과 응용입니다. 특히, 저전압, 낮은 히스테리시스, 높은 이동도를 구현한 나노결정체 기반 전자소자에 대한 기초 및 응용 연구를 꾸준히 진행하고 있습니다.
Figures are computed from collected data and may differ slightly.
High-mobility solution-processed all-inorganic solid state nanocrystal (NC) transistors with low operation voltage and near-zero hysteresis are demonstrated using high-capacitance ZrO(x) and hydroxyl-free Cytop gate dielectric materials. The use of inorganic capping ligands (In(2)Se(4)(2-) and S(2-)) allowed us to achieve high electron mobility in the arrays of solution-processed CdSe nanocrystals. We also studied the hysteresis behavior and switching speed of NC-based field effect devices. Coll
Abstract High‐performance and high‐reliability photodiodes are demonstrated by using α‐CsPbI 3 perovskite nanocrystals (NCs) phase‐stabilized with a low‐temperature solution‐treated active layer. In addition to the high charge mobility, the high absorption coefficient, and IR‐blind characteristics of the perovskite material, the defect‐tolerant nature of α‐CsPbI 3 perovskite NCs are combined to realize hysteresis‐free and high detectivity photodiodes. To further minimize interface defects origin
The theoretical optoelectronic properties of chalcogenide perovskites (e.g., BaZrS3) are as good as those of halide perovskites (e.g., CH3NH3PbI3). But the fabrication of optoelectronic devices is rarely reported, mainly because researchers still do not know how to prepare good quality thin films of chalcogenide perovskites. Here, we report colloidal BaZrS3 nanocrystals (NCs, 40-60 nm) and their solution processed thin film transistors. BaZrS3 NCs are first prepared using a solid-state synthesis
A series of new anthracene based semiconductors are designed and synthesized. By substituting appropriate acenes at the 2,6-positions of triisopropylsilylethynyl anthracene (NMR, IR, DSC and TGA spectra and crystallographic information of TIPSAntBT and TIPSAntNa), two different derivatives were prepared. Especially, TIPSAntNa (naphthalene as a side group) showed superior performance when it was used as channel material. A hole mobility as high as 3.7 cm2 V−1 s−1 was obtained from single crystal
We have synthesized a new p-type polymer, poly[(1,2-bis-(2′-thienyl)vinyl-5′,5′′-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl] (PTVTF), via a Suzuki coupling reaction. PTVTF was found with UV–vis absorption spectroscopy, GIXD, AFM, and NEXAFS to be an ‘annealing-freeʼ amorphous polymer. Despite its amorphous nature, our time-of-flight measurements demonstrate that PTVTF is a good hole transport material with an intrinsic hole mobility of 2 × 10−4 cm2/Vs, which is comparable to those of crystalli
Cu2BaSnS4 (CBTS) is an emerging earth-abundant and environmentally benign semiconductor. However, there has been no prior report of colloidal CBTS nanocrystals. Here we developed a colloidal synthesis of CBTS nanocrystals by rational design. Photophysical properties of these nanocrystals are elucidated using photoluminescence and ultrafast transient absorption spectroscopy. Finally, thin films of CBTS nanocrystals grown at room temperature are used as the hole transport layer (HTL) in an organic
Poly(5′,5′′-bithiophene-alt-2,6-[(1,5-didecyloxy)naphthalene]) (PBDN) was synthesized from 2,6-dibromo-l,5-didecyloxynaphthalene and 1,1′-[2,2′-bithiophene]-5,5′-diylbis[1,1,1-trimethylstannane] and was used as the active layer in organic thin-film transistors (OTFTs) and organic photovoltaic cells (OPVs). The obtained PBDN was soluble in organic solvents such as chloroform, chlorobenzene, and toluene and had a weight-averaged molecular weight of 9100, with a polydispersity index of 1.31. The ph
Abstract Photomultiplication‐type organic photodetectors (PM‐OPDs) with high external quantum efficiency (EQE) of over 100% are attracting increasing attention due to their potential importance in detecting weak incident light. Considering that the gain of PM‐OPD is determined by the ratio of carrier lifetime over carrier transit time, a systematic study on the effect of the end‐functionalization of a new extended aromatic fused‐ring non‐fullerene acceptor (NFA) on the carrier trap/transit time
We prepared a series of small molecules based on 7,7'-(4,4-bis(2-ethylhexyl)-4<i>H</i>-silolo[3,2-<i>b</i>:4,5-<i>b</i>']dithiophene-2,6-diyl)bis(4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[<i>c</i>][1,2,5]thiadiazole) with different fluorine substitution patterns (<b>0F-4F</b>). Depending on symmetricity and numbers of fluorine atoms incorporated in the benzo[<i>c</i>][1,2,5]thiadiazole unit, they show very different optical and morphological properties in a film. <b>2F</b> and <b>4F</b>, which f
A photomultiplication-type organic photodiode (PM-OPD), where an electric double layer (EDL) is strategically embedded, is demonstrated, with an exceptionally high external quantum efficiency (EQE) of 2 210 000%, responsivity of 11 200 A W<sup>-1</sup> , specific detectivity of 2.11 × 10<sup>14</sup> Jones, and gain-bandwidth product of 1.92 × 10<sup>7</sup> Hz, as well as high reproducibility. A polymer electrolyte, poly(9,9-bis(3'-(N,N-dimethyl)-N-ethylammoinium-propyl-2,7-fluorene)-alt-2,7-(9
A summary of color selective organic photodiodes in accordance with various color selection mechanisms is presented.
To elucidate the origin of the high field-effect mobility (≈0.02cm2∕Vs) of amorphous poly[(1,2-bis-(2′-thienyl)vinyl-5′,5″-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl], we investigated the current density–voltage (J-V) and mobility–voltage (μ-V) relationships as a function of temperature. By using the power law model and the Gaussian hopping model, we determined a characteristic trap energy of 67meV, an energetic disorder parameter of 64meV, and a total trap density of 2.5×1016cm−3, comparable
This review reports an overview of the fundamental understanding of oxide TFTs and recent research advances in heterojunction oxide TFTs.
A strategy for highly color-selective polymeric photodiodes is reported. The nonabsorbing acceptor enables the color-selective polymeric donor to fully reflect its absorption spectrum in the final quantum efficiency spectrum. The optimized planar heterojunction device structure leads to low dark current down to 1.3 nA cm−2 as well as high detectivity up to 1.15 × 1012 cm Hz0.5 W-1. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such
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