Hanyang University · Engineering
Professor Jin-Goo Park's research lab specializes in surface and interfacial phenomena in semiconductor manufacturing, with a focus on chemical mechanical polishing (CMP) processes, contamination control, and surface modification. The lab investigates the fundamental interactions between slurries, particles, and wafer materials—such as silicon, polysilicon, and metal films—under various chemical and electrokinetic conditions. Key research directions include the role of surface charge, zeta potential, and interfacial forces in determining polishing performance and defect formation, as well as the development of strategies to enhance surface cleanliness and planarization efficiency through chemical additives like H₂O₂ and benzotriazole (BTA).
Figures are computed from collected data and may differ slightly.
In this study, the interfacial and electrokinetic phenomena of mixtures of isopropyl alcohol (IPA) and deionized (DI) water in relation to semiconductor wafer drying is investigated. The dielectric constant of an IPA solution linearly decreased from 78 to 18 with the addition of IPA to DI water. The viscosity of IPA solutions increased as the volume percentage of IPA in DI water increased. The zeta potentials of silica particles and silicon wafers were also measured in IPA solutions. The zeta po
The contamination behavior of ceria particles (50 and 100 nm) with oxide surfaces at pH 4 and 8 was studied using dipping and polishing conditions. Higher contamination at pH 4 than pH 8 was observed for dipping cases. In contrast, pH 8 conditions produced higher contamination than pH 4 for polishing cases. The difference in the contamination between dipping and polishing could be attributed to electrostatic attraction and chemical bonding. During polishing, weak or no chemical bonding may occur
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