Seoul National University · Medicine
Professor Jung-Kyu Lee's research lab specializes in advanced electronic materials and devices, with a primary focus on resistive random-access memory (RRAM) systems based on titanium oxide and related oxides. The lab investigates fundamental mechanisms of resistive switching, current conduction, and low-frequency noise phenomena, particularly in amorphous TiOx-based RRAMs, to understand and optimize device reliability and performance. Additionally, the lab explores innovative 3D localization algorithms for positioning systems and develops novel gas-sensing technologies using metal-oxide materials for environmental monitoring.
Figures are computed from collected data and may differ slightly.
Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. A
Random telegraph noise (RTN) has been studied in amorphous TiOx (α-TiOx) resistance switching random access memories (RRAMs). The RTN having two discrete current levels was observed only in the high-resistance state of the RRAMs. By investigating the bias dependence of capture and emission time constants, we extracted the vertical location of a trap responsible for the RTN in RRAM devices. The trap causing the RTN was found around 5.7 nm below the Ti (top electrode). The trap energy was less by
We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN)
In this letter, we propose a novel three-dimensional (3D) localization algorithm based on a simple range-based localization approach. The proposed scheme requires distance measurements associated with only three anchor nodes for a 3D location estimation using linear least squares estimation (LLSE). It uses Heron's formula of tetrahedron to calculate the target height and then transforms a two-dimensional location computed by LLSE into a 3D estimated location. Simulation results validate the accu
The appropriate strategy for enteral feeding remains a matter of debate. We hypothesized that continuous enteral feeding would result in higher rates of achieving target nutrition during the first 7 days compared with intermittent enteral feeding. We conducted an unblinded, single-center, parallel-group, randomized controlled trial involving adult patients admitted to the medical intensive care unit who required mechanical ventilation to determine the efficacy and safety of continuous enteral fe
Herein, we report a case of multiple systemic arteries to pulmonary artery fistulas without any underlying causes, presenting recurrent hemoptysis. Transcatheter embolization was successfully performed several times on multiple systemic feeding arteries. Multiple systemic arteries to pulmonary fistulas can be a source of uncontrolled bleeding, and embolization may be a reasonable therapeutic option to control the bleeding.
This work presents experimental contact stiffness measurements for various thin films as well as homogenous materials through pressing a flat punch onto a nominally flat rough surface. These materials are typically used in micro/nano technological applications with thickness of the order of few nanometers. The experimental contact stiffness results are compared with predictions by different statistical rough surface contact models to assess their predictive accuracy for thin-film applications an
We investigate the low-frequency noise (LFN) characteristics of resistive switching random access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO2/TiN (filamentary) and TiN/Ti/TiO2/HfO2/TiN (interfacial). By comparing filamentary and interfacial RRAM devices, we stipulate guidelines for noise sources according to the resistance states or resistive switching mechanisms of RRAM device. In filamentary RRAM devices, the dominant noise source in the low resistance state is t
Serum activin-A was a predictor of sepsis severity and a prognostic marker in critically ill patients with sepsis. Serum activin-A concentration in the early phase of sepsis was associated with prognostic indexes on ICU admission and with ICU mortality.
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