Tokyo Institute of Technology · Materials Science
Professor Mutsuko Hatano's research lab specializes in advanced quantum sensing and materials engineering for next-generation energy and electronics applications. The lab focuses on developing diamond-based quantum sensors, particularly nitrogen-vacancy (NV) centers in diamond, for high-precision, real-time monitoring of temperature and electric current in harsh environments such as electric vehicle batteries. Key research directions include the design of ultra-compact, portable quantum sensor heads for industrial and automotive applications, and the development of novel laser crystallization techniques for high-performance poly-Si thin-film transistors (TFTs). The lab also investigates spin-related defects in wide-bandgap semiconductors like 4H-SiC for thermometric quantum sensing.
Figures are computed from collected data and may differ slightly.
The liquid/solid interface motion and temperature history during excimer laser annealing of 50-nm-thick Si films on fused quartz substrates are investigated by in situ nanosecond time-resolved electrical conductance, optical reflectance, and transmittance at visible and near-IR wavelengths, combined with thermal emission measurements. The temperature response, melt propagation and evolution of the recrystallization process are fundamentally different in the partial-melting and the complete-melti
Energy conservation and battery life extension are key challenges for the next-generation hybrid electric vehicles. In particular, the temperature and electric currents in a storage battery need to be monitored simultaneously with ∼1 kHz signal bandwidth for optimum battery usage. Here we introduce a centimeter-scale portable quantum sensor head, consisting of a diamond substrate hosting an ensemble of nitrogen-vacancy (NV) color centers with a density of ∼3 × 1017 cm−3. One diamond surface is a
Abstract A novel method for laser‐recrystallized poly‐Si layer formation is proposed. The pulse‐duration‐controlled solid‐state laser is utilized to enhance the lateral crystal growth, and an excimer‐ laser‐crystallized poly‐Si layer is used as a precursor. The validity of the method is confirmed by superior TFT characteristics of high field‐effect mobility (n‐ch TIT:μ > 460 cm 2 /Vs, p‐ch TFT: μ > 150 cm 2 /Vs) with low threshold voltage deviation (Vth: 3 σ < 0.25 V).
We characterized the excited state (ES) and the ground state (GS) of negatively charged silicon vacancy (VSi−) centers in hexagonal silicon carbide (4H-SiC) using optically detected magnetic resonance (ODMR) to realize thermometric quantum sensors. We report the observation of inverted contrast between ODMR signals of the ES and the GS and clarify the effect of energy sublevels of spin states in 4H-SiC. We confirm that ES ODMR signals of VSi− centers are dependent on the temperature with a therm
Gate-overlapped LDD poly-Si TFT fabricated by using poly Si-sidewall gates self-alignment process (Sa-GOLD), is proposed. The Sa-GOLD TFTs are suitable for high-speed operation because of small overlapping capacitance and large transconductance. Furthermore, they can reduce the drain electric field, and provide high reliability against drain-avalanche hot-carrier.
Considering the rising popularity of electric vehicles (EVs), it is essential to enhance the cruising mileage and extend the lifetime of batteries. To accomplish this, accurate monitoring of the charge and discharge current of the battery over a wide temperature range is essential. We developed a compact diamond quantum sensor head with a size of 1 × 1 × 0.5 cm3, consisting of a (111) high-pressure and high-temperature synthesized diamond with nitrogen-vacancy centers, by electron beam irradiati
Abstract Magnetic field imaging of magnetic particles using diamond sensors with nitrogen-vacancy (NV) centers has the potential to become a new prominent living-cell observation method, because of the reduction of photodamage to cells. To realize a higher signal-to-noise ratio of magnetic detection, perfectly aligned and high-density NV centers in the diamond are required because they are effective in reducing optical shot noise. In this study, diamond films were grown by microwave plasma CVD o
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