Soong Ju Oh

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin

Abstract Highly sensitive temperature sensors are designed by exploiting the interparticle distance–dependent transport mechanism in nanocrystal (NC) thin films based on a thermal expansion strategy. The effect of ligands on the electronic, thermal, mechanical, and charge transport properties of silver (Ag) NC thin films on thermal expandable substrates of poly(dimethylsiloxane) (PDMS) is investigated. While inorganic ligand‐treated Ag NC thin films exhibit a low temperature coefficient of resis

We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized fro

In this study, multifunctional light-emitting and passive radiative cooling (LEPC) materials and devices are designed by embedding chemically designed perovskite nanocrystals (NCs) into the radiative polymer layer. Lead halide perovskite NCs are chosen as the light-emitting material, owing to their high photon radiation rate and low phonon generation. To integrate the perovskite NCs into the radiative polymer layers, a surface passivation is achieved by coating the NCs with silica. The silica sh

All-nanocrystal (NC)-based and all-solution-processed wearable resistance temperature detectors (RTDs) are introduced. The charge transport mechanisms of Ag NC thin films are engineered through various ligand treatments to design high performance RTDs. Highly conductive Ag NC thin films exhibiting metallic transport behavior with high positive temperature coefficients of resistance (TCRs) are achieved through tetrabutylammonium bromide treatment. Ag NC thin films showing hopping transport with h

Abstract Wearable strain sensors are widely researched as core components in electronic skin. However, their limited capability of detecting only a single axial strain, and their low sensitivity, stability, opacity, and high production costs hinder their use in advanced applications. Herein, multiaxially highly sensitive, optically transparent, chemically stable, and solution‐processed strain sensors are demonstrated. Transparent indium tin oxide and zinc oxide nanocrystals serve as metallic and

Abstract Lead sulfide colloidal quantum dot photodiodes (PbS QDPDs) exhibit a high energy conversion efficiency for infrared detection. Despite the high photoinduced current, the performance of PbS QDPDs is limited by the high dark current which is rarely investigated. Understanding the dark current in PbS QDPDs is critical to improving the detectivity of PbS QDPDs. Herein, it is demonstrated that minority carriers of I‐passivated PbS films and trap sites of EDT‐passivated PbS films are related

In this study, non-temperature interference strain gauge sensors, which are only sensitive to strain but not temperature, are developed by engineering the properties and structure from a material perspective. The environmental interference from temperature fluctuations is successfully eliminated by controlling the charge transport in nanoparticles with thermally expandable polymer substrates. Notably, the negative temperature coefficient of resistance (TCR), which originates from the hopping tra

All-solution processed, high-performance wearable strain sensors are demonstrated using heterostructure nanocrystal (NC) solids. By incorporating insulating artificial atoms of CdSe quantum dot NCs into metallic artificial atoms of Au NC thin film matrix, metal-insulator heterostructures are designed. This hybrid structure results in a shift close to the percolation threshold, modifying the charge transport mechanism and enhancing sensitivity in accordance with the site percolation theory. The n

We introduce a stepwise, hybrid ligand-exchange method for lead chalcogenide nanocrystal (NC) thin films using the compact-inorganic ligand thiocyanate and the short organic ligand benzenediothiolate. Spectroscopic and device measurements show that hybrid exchange enhances both carrier mobility and lifetime in NC thin films. The increased mobility-lifetime product achieved by this method enables demonstration of optoelectronic devices with enhanced power conversion and quantum efficiency.

Multifunctional temperature–strain sensors that can simultaneously detect temperature and strain are fabricated through all-solution processes using colloidal Ag nanocrystals (NCs). Material and architecture design are introduced to efficiently distinguish signals, allowing accurate measurement from one sensor device. For material design, a ligand-exchange and reduction process is developed to increase the sensitivity. As a result, higher temperature coefficients of resistance, lower resistivity

Group III–V colloidal quantum dots (CQDs) are promising infrared-absorbing materials that overcome the limitations of their regulated heavy-metal-containing counterparts, including Pb-, Cd-, and Hg-based materials. However, their surfaces and ligand chemistry remain unexplored, impeding sufficient ligand exchange. Therefore, approaches for selecting suitable exchange/passivation-enabling ligands for group III–V CQDs must be devised. Based on the hard–soft acid–base theory, diverse metal halide l

We report a simple, solution-based, and postsynthetic process for simultaneous ligand exchange, surface passivation, and doping of CdSe nanocrystals (NCs) for the design of high-performance field-effect transistors (FETs). Strong electronic coupling, effective surface trap passivation, and n-type doping of the NCs could be achieved by simply immersing the as-synthesized CdSe NC thin films into InX3 (X = Cl, Br, I) solution. The optical, chemical, and structural properties of these CdSe NC thin f