Tae Whan Kim

Abstract Simulating the human brain for neuromorphic computing has attractive prospects in the field of artificial intelligence. Optoelectronic synapses have been considered to be important cornerstones of neuromorphic computing due to their ability to process optoelectronic input signals intelligently. In this work, optoelectronic synapses based on all‐inorganic perovskite nanoplates are fabricated, and the electronic and photonic synaptic plasticity is investigated. Versatile synaptic function

The mimicking of classical conditioning, including acquisition, extinction, recovery, and generalization, can be efficiently achieved by using a single flexible memristor. In particular, the experiment of Pavlov's dog is successfully demonstrated. This demonstration paves the way for reproducing advanced neural processes and provides a frontier approach to the design of artificial-intelligence systems with dramatically reduced complexity.

Fabrication of human-like intelligent tactile sensors is an intriguing challenge for developing human-machine interfaces. As inspired by somatosensory signal generation and neuroplasticity-based signal processing, intelligent neuromorphic tactile sensors with learning and memory based on the principle of a triboelectric nanogenerator are demonstrated. The tactile sensors can actively produce signals with various amplitudes on the basis of the history of pressure stimulations because of their cap

Perovskite materials have exhibited promising potential for universal applications including backlighting, color conversion, and anticounterfeiting labels fabricated using solution processes. However, owing to the tendency of those materials to have uncontrollable morphologies and to form large crystals, they cannot be utilized in discontinuous microminiaturization, which is crucial for practical optoelectronic applications. In this research, combining the effects of adding polyvinylpyrrolidone

Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behav