Seoul National University · Materials Science
Professor Tae Won Noh's research lab specializes in the physics of quantum materials, with a focus on correlated electron systems, topological quantum phenomena, and nanoscale ferroic materials. The lab investigates emergent quantum phases in oxide heterostructures, particularly the interplay between electron correlation, spin-orbit coupling, and structural inhomogeneities that give rise to exotic transport and magnetic properties. Using advanced nanoscale characterization techniques such as modified piezoresponse force microscopy and molecular beam epitaxy, the lab explores the fundamental mechanisms behind phenomena like the anomalous Hall effect and polarization fatigue in oxide thin films. Their work bridges quantum materials science and nanoelectronics, aiming to uncover new principles for next-generation quantum devices.
Figures are computed from collected data and may differ slightly.
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for understanding exotic topological properties. A prominent example is Hall anomalies observed in SrRuO<sub>3</sub> films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the evolution of A
Abstract The microscopic mechanism of polarization fatigue (i.e., a loss of switchable polarization under electrical cycling) remains one of the most important long‐standing problems in ferroelectric communities. Although there are numerous proposed fatigue models, a consensus between the models and experimental results is not reached yet. By using modified‐piezoresponse force microscopy, nanoscale domain switching dynamics are visualized for different fatigue stages in epitaxial PbZr 0.4 Ti 0.6
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