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Young-Ho Khang

Seoul National University · Engineering

About the Lab

Professor Young-Ho Khang's research lab specializes in advanced materials science with a focus on functional materials for energy and biomedical applications. The lab investigates transparent and flexible oxide semiconductors, such as amorphous indium-zinc-tin oxide (a-IZTO), for high-performance optoelectronic devices, while also exploring two-dimensional transition metal dichalcogenides and perovskite materials for catalytic and photovoltaic applications. A key theme is the atomic-level understanding of electronic and vibrational properties through first-principles calculations, particularly electron-phonon coupling and defect engineering. The lab also examines biological interfaces, such as platelet-rich fibrin and macrophage autophagy, linking materials science to regenerative medicine and metabolic disease.

oxide semiconductorsfirst-principles calculationsperovskite materials2D materialselectron-phonon coupling

Research Overview

Papers
159
Total Citations
2,948
Papers (5y)
62
Primary Field
Engineering

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
62total
2021
2022
2023
2024
2025
Citations per year (5y)
464total
20212022202320242025

Selected Papers

15
1
Article|246 citations·2010
Platelet-Rich Fibrin is a Bioscaffold and Reservoir of Growth Factors for Tissue Regeneration
Youngho Kang, Soung Hoo Jeon, Joo‐Young Park, Jong-Hoon Chung, Yun‐Hoon Choung, Han‐Wool Choung, Eunsuk Kim, Pill‐Hoon Choung
SJR Q2FWCI 8.3Tissue Engineering Part A

The platelet-rich fibrin (PRF) is known as a rich source of autologous cytokines and growth factors and universally used for tissue regeneration in current clinical medicine. However, the microstructure of PRF has not been fully investigated nor have been studied the key molecules that differ PRF from platelet-rich plasma. We fabricated PRF under Choukroun's protocol and produced its extract (PRFe) by freezing at -80°C. The conventional histological, immunohistological staining, and scanning ele

UrologyMedicine
2
Article|147 citations·2017
Fundamental limits on the electron mobility of<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>
Youngho Kang, Karthik Krishnaswamy, Hartwin Peelaers, Chris G. Van de Walle
SJR Q2FWCI 6.5Journal of Physics Condensed Matter

We perform first-principles calculations to investigate the electronic and vibrational spectra and the electron mobility of β-Ga<sub>2</sub>O<sub>3</sub>. We calculate the electron-phonon scattering rate of the polar optical phonon modes using the Vogl model in conjunction with Fermi's golden rule; this enables us to fully take the anisotropic phonon spectra of the monoclinic lattice of β-Ga<sub>2</sub>O<sub>3</sub> into account. We also examine the scattering rate due to ionized impurities or d

Electronic, Optical and Magnetic MaterialsMaterials Science
3
Article|125 citations·2018
Hydrogen Evolution Reaction at Anion Vacancy of Two-Dimensional Transition-Metal Dichalcogenides: Ab Initio Computational Screening
Joohee Lee, Sungwoo Kang, Kanghoon Yim, Kye Yeop Kim, Ho Won Jang, Youngho Kang, Seungwu Han
SJR Q1FWCI 7.2The Journal of Physical Chemistry Letters

The catalytic activity for the hydrogen evolution reaction (HER) at the anion vacancy of 40 2D transition-metal dichalcogenides (TMDs) is investigated using the hydrogen adsorption free energy (Δ G<sub>H</sub>) as the activity descriptor. While vacancy-free basal planes are mostly inactive, anion vacancy makes the hydrogen bonding stronger than clean basal planes, promoting the HER performance of many TMDs. We find that ZrSe<sub>2</sub> and ZrTe<sub>2</sub> have similar Δ G<sub>H</sub> as Pt, th

Electrical and Electronic EngineeringEngineering
4
Article|114 citations·2015
Hydrogen Bistability as the Origin of Photo‐Bias‐Thermal Instabilities in Amorphous Oxide Semiconductors
Youngho Kang, Byung Du Ahn, Ji Hun Song, Yeon Gon Mo, Ho‐Hyun Nahm, Seungwu Han, Jae Kyeong Jeong
SJR Q1FWCI 4.6Advanced Electronic Materials

Zinc‐based metal oxide semiconductors have attracted attention as an alternative to current silicon‐based semiconductors for applications in transparent and flexible electronics. Despite this, metal oxide transistors require significant improvements in performance and electrical reliability before they can be applied widely in optoelectronics. Amorphous indium–zinc–tin oxide (a‐IZTO) has been considered an alternative channel layer to a prototypical indium–gallium–zinc oxide (IGZO) with the aim

Electrical and Electronic EngineeringEngineering
5
Article|90 citations·2016
Impaired macrophage autophagy induces systemic insulin resistance in obesity
Youngho Kang, Mi‐Hyang Cho, Ji-Young Kim, Min-Seo Kwon, Jongjin Peak, Sang‐Wook Kang, Seung‐Yong Yoon, Youngsup Song
SJR Q2FWCI 9.1OncotargetOA

Obesity-induced insulin resistance and diabetes are significantly associated with infiltrates of inflammatory cells in adipose tissue. Previous studies recognized the involvement of autophagy in the regulation of metabolism in multiple tissues, including β-cells, hepatocytes, myocytes, and adipocytes. However, despite the importance of macrophages in obesity-induced insulin resistance, the role of macrophage autophagy in regulating insulin sensitivity is seldom addressed. In the present study, w

EpidemiologyMedicine
6
Article|85 citations·2018
Intrinsic Carrier Mobility of Cesium Lead Halide Perovskites
Youngho Kang, Seungwu Han
SJR Q1FWCI 5.1Physical Review Applied

Cesium lead halides in the perovskite crystal structure are promising absorbers to enable cheap, high-performance photovoltaics or light-emitting devices. Using first-principles calculations plus Boltzmann transport theory, the authors report an intrinsic limit on the room-temperature carrier mobility of CsPb${X}_{3}$ that is due to scattering via electron-phonon coupling. Using different halides $X$ in the compound can change the mobility by a factor of 3---5, because of the change in electroni

Electrical and Electronic EngineeringEngineering
7
Article|58 citations·2019
Computational Screening of Indirect-Gap Semiconductors for Potential Photovoltaic Absorbers
Youngho Kang, Yong Youn, Seungwu Han, Ji‐Won Park, Chang‐Seok Oh
SJR Q1FWCI 2.4Chemistry of Materials

Photovoltaic (PV) absorbers are key components of PV cells used to harvest solar energy, which is an attractive renewable energy resource. In this study, a high-throughput computational screening is conducted to discover potential PV absorbers. While direct-gap semiconductors are usually favored as PV absorbers, herein, we focus on indirect-gap semiconductors that could exhibit a long lifetime of photocarriers because of the low probability of band-to-band recombination, enabling high-performanc

Electrical and Electronic EngineeringEngineering
8
Article|51 citations·2018
Role of Hyper-Reduced States in Hydrogen Evolution Reaction at Sulfur Vacancy in MoS<sub>2</sub>
Kye Yeop Kim, Joohee Lee, Sungwoo Kang, Young‐Woo Son, Ho Won Jang, Youngho Kang, Seungwu Han
SJR Q1FWCI 1.9ACS Catalysis

Using the multiscale simulation combining ab initio calculations and kinetic Monte Carlo (KMC) simulations, we theoretically investigate the hydrogen evolution reaction (HER) on the sulfur vacancy of a MoS2 monolayer. Unlike metal catalysts, the protonation step and the charging step proceed independently in semiconducting MoS2. Interestingly, the barrier for hydrogen evolution decreases when the vacancy site is hyper-reduced with extra electrons. The turnover frequency and polarization curve ob

Renewable Energy, Sustainability and the EnvironmentEnergy
9
Article|39 citations·2014
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>G</mml:mi><mml:mi>W</mml:mi></mml:mrow></mml:math>calculations on post-transition-metal oxides
Youngho Kang, Gijae Kang, Ho‐Hyun Nahm, Seong‐Ho Cho, Young Soo Park, Seungwu Han
SJR Q1FWCI 1.3Physical Review B

In order to establish the reliable $GW$ scheme that can be consistently applied to post-transition-metal oxides (post-TMOs), we carry out comprehensive $GW$ calculations on electronic structures of ZnO, ${\text{Ga}}_{2}$${\text{O}}_{3}$, ${\text{In}}_{2}$${\text{O}}_{3}$, and ${\text{SnO}}_{2}$, the four representative post-TMOs. Various levels of self-consistency (${G}_{0}{W}_{0}$, $G{W}_{0}$, and $QPG{W}_{0}$) and different starting functionals (GGA, GGA + $U$, and hybrid functional) are teste

Materials ChemistryMaterials Science
10
Article|38 citations·2020
Enhancement of Photoluminescence Quantum Yield and Stability in CsPbBr3 Perovskite Quantum Dots by Trivalent Doping
Sujeong Jung, Jae Ho Kim, Jin Woo Choi, Jae‐Wook Kang, Sung‐Ho Jin, Youngho Kang, Myungkwan Song
SJR Q1FWCI 2.2NanomaterialsOA

We determine the influence of substitutional defects on perovskite quantum dots through experimental and theoretical investigations. Substitutional defects were introduced by trivalent dopants (In, Sb, and Bi) in CsPbBr<sub>3</sub> by ligand-assisted reprecipitation. We show that the photoluminescence (PL) emission peak shifts toward shorter wavelengths when doping concentrations are increased. Trivalent metal-doped CsPbBr<sub>3</sub> enhanced the PL quantum yield (~10%) and air stability (over

Electrical and Electronic EngineeringEngineering
11
Article|36 citations·2018
The Nature of the Oxygen Vacancy in Amorphous Oxide Semiconductors: Shallow Versus Deep
Hochul Song, Gijae Kang, Youngho Kang, Seungwu Han
SJR Q3FWCI 0.8physica status solidi (b)

Using first‐principles calculation, we investigate the nature of oxygen vacancy ( V O ), namely shallow versus deep, in the amorphous oxide semiconductor InGaZnO 4 ( a ‐IGZO), which has not been fully clarified despite its technological importance. Oxygen‐deficient amorphous models are generated through the hybrid functional molecular dynamics (MD) simulations that allow for finding stable V O configurations while minimizing computational approximations. From eight independent models, we consist

Electrical and Electronic EngineeringEngineering
12
Article|35 citations·2016
<i>Ab initio</i>calculation of ionization potential and electron affinity in solid-state organic semiconductors
Youngho Kang, Sang Ho Jeon, Youngmi Cho, Seungwu Han
SJR Q1FWCI 2.4Physical review. B./Physical review. B

We investigate the vertical ionization potential (IP) and electron affinity (EA) of organic semiconductors in the solid state that govern the optoelectrical property of organic devices using a fully ab initio way. The present method combines the density functional theory and many-body perturbation theory based on $GW$ approximations. To demonstrate the accuracy of this approach, we carry out calculations on several prototypical organic molecules. Since IP and EA depend on the molecular orientati

Electrical and Electronic EngineeringEngineering
13
Article|35 citations·2013
Cation disorder as the major electron scattering source in crystalline InGaZnO
Youngho Kang, Youngmi Cho, Seungwu Han
SJR Q1FWCI 2.5Applied Physics Letters

We theoretically investigate the electron transport mechanism in crystalline In-Ga-Zn oxides using the semi-classical transport theory. The site disorder of Ga and Zn atoms is treated based on the virtual crystal approximation. The valence difference between Ga3+ and Zn2+, modeled by screened Coulomb potential, plays a critical role in determining the total electron mobility. The temperature and carrier-density dependences of the calculated electron mobility are in excellent agreement with exper

Materials ChemistryMaterials Science
14
Article|34 citations·2019
Unveiling Electrochemical Reaction Pathways of CO<sub>2</sub> Reduction to C<sub><i>N</i></sub> Species at S‐Vacancies of MoS<sub>2</sub>
Sungwoo Kang, Seungwu Han, Youngho Kang
SJR Q1FWCI 1.0ChemSusChem

Although C<sub>1</sub> species such as CO and CH<sub>4</sub> constitute the majority of CO<sub>2</sub> reduction (CO<sub>2</sub> R) products on known catalysts, recent experiments showed that 1-propanol with two C-C bonds is produced as the main CO<sub>2</sub> R product on MoS<sub>2</sub> single crystals in aqueous electrolytes. Herein, the CO<sub>2</sub> R mechanism on MoS<sub>2</sub> is investigated by using first-principle calculations. Focusing on S-vacancies (V<sub>S</sub> ) as the catalyti

Renewable Energy, Sustainability and the EnvironmentEnergy
15
Article|34 citations·2022
Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors
Jeonga Lee, Cheol Hee Choi, Taikyu Kim, Jae Seok Hur, Min Jae Kim, Eun Hyun Kim, Jun Hyung Lim, Youngho Kang, Jae Kyeong Jeong
SJR Q1FWCI 2.7ACS Applied Materials & Interfaces

This study investigated the effect of hydrogen (H) on the performance of amorphous In-Ga-Zn-Sn oxide (<i>a</i>-In<sub>0.29</sub>Ga<sub>0.35</sub>Zn<sub>0.11</sub>Sn<sub>0.25</sub>O) thin-film transistors (TFTs). Ample H in plasma-enhanced atomic layer deposition (PEALD)-derived SiO<sub>2</sub> can diffuse into the underlying <i>a</i>-IGZTO film during the postdeposition annealing (PDA) process, which affects the electrical properties of the resulting TFTs due to its donor behavior in the <i>a</i

Electrical and Electronic EngineeringEngineering

Research Areas

Electrical and Electronic EngineeringMaterials ChemistryRenewable Energy, Sustainability and the EnvironmentFluid Flow and Transfer ProcessesMolecular BiologyPolymers and Plastics

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