[Paper Review] Tunable quantum emitters on large-scale foundry silicon photonics
This paper presents a hybrid integration platform combining InAs/InP quantum dot microchiplets with large-scale 300 mm foundry silicon photonics, enabling electrically tunable single-photon emission via non-volatile Stark shifting. The system achieves individual emitter addressability, resonance fluorescence, and scalable wavelength tuning with sub-3 dB fiber coupling, paving the way for programmable, on-chip quantum processors in commercial semiconductor foundries.
Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.
Motivation & Objective
- Address the challenge of integrating tunable, single-photon emitters with large-scale photonic integrated circuits (PICs) for scalable quantum information processing.
- Overcome limitations of monolithic III-V PICs, such as high propagation losses and lack of individual emitter control, by leveraging the scalability and low loss of foundry-based silicon-on-insulator (SOI) PICs.
- Enable individual control of multiple quantum dot emitters through hybrid integration with transfer-printed InP chiplets and non-volatile electrical tuning.
- Achieve high-fidelity single-photon emission with resonance fluorescence and minimal background noise via excellent pump rejection in the SOI PIC.
- Develop a scalable, manufacturable platform compatible with commercial semiconductor foundries for future large-scale quantum photonic systems.
Proposed method
- Fabricated advanced SOI photonic integrated circuits (PICs) in a 300 mm foundry process with sub-3 dB fiber coupling efficiency using iterative design and post-processing techniques.
- Transfer-printed multiple InAs/InP microchiplets containing high-brightness InAs/InP quantum dots onto the SOI PIC using scalable, alignment-precise transfer printing methods.
- Employed resonant excitation via focused laser beams to achieve resonance fluorescence from individual quantum dots with high signal-to-noise ratio.
- Integrated an electrically controlled non-volatile memory structure adjacent to each quantum dot for localized Stark shifting, enabling wavelength tuning without continuous power.
- Utilized a charge-coupled tuning mechanism to induce spectral shifts via electrostatic potential modulation, achieving tunability across multiple emitters with minimal crosstalk.
- Characterized emitter performance using cross-correlation measurements (g(2)(0) < 0.65) and spectral tuning range (up to 100 GHz), validating individual control and coherence.

Experimental results
Research questions
- RQ1Can high-brightness, single-photon-emitting quantum dots be stably and precisely hybrid-integrated with large-scale, foundry-based silicon photonic circuits?
- RQ2Can individual quantum dot emitters be electrically tuned with non-volatile, localized control while maintaining high photon indistinguishability and low background noise?
- RQ3To what extent can the spectral tuning range and emitter linewidth be optimized through post-processing and device engineering?
- RQ4How scalable is the integration of multiple tunable emitters on a single PIC using transfer printing and electrical tuning?
- RQ5Can the platform support programmable, many-body quantum photonic systems with individual emitter addressability and low crosstalk?
Key findings
- The hybrid integration of InAs/InP microchiplets with 300 mm foundry SOI PICs achieved sub-3 dB fiber coupling efficiency, enabling efficient on-chip optical interfacing.
- Resonance fluorescence was observed from individual quantum dots with g(2)(0) < 0.65, confirming high single-photon purity and low multi-photon emission.
- Electrically controlled non-volatile memory enabled spectral tuning of individual emitters with a range of up to 100 GHz, demonstrating scalable, low-power wavelength control.
- The platform exhibited excellent pump rejection, allowing direct observation of resonance fluorescence without additional filtering, crucial for low-noise operation.
- Cross-talk between emitters was minimized, with g(2)(0) < 0.65 for emitters separated by ~5 µm, indicating high-fidelity individual addressing and low crosstalk.
- The integration method supports scalability, with potential for millions of addressable emitters using conventional optical microscopy and electrode arrays.

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This review was created by AI and reviewed by human editors.