The University of Tokyo · Materials Science
Professor Yoshihiro Iwasa's research lab specializes in quantum materials and 2D materials, focusing on the electronic and optical properties arising from strong electron correlations, valley degrees of freedom, and topological phenomena. The lab explores novel quantum phases such as unconventional superconductivity in band insulators and develops electrically tunable optoelectronic devices based on transition metal dichalcogenides. By combining advanced nanofabrication techniques with electrostatic doping and high-pressure synthesis, the group investigates emergent quantum states and functional devices at the atomic scale. Their work bridges fundamental quantum physics with practical applications in next-generation electronics and photonics.
Figures are computed from collected data and may differ slightly.
A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS(2), an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large
Tungsten diselenide (WSe2) and related transition metal dichalcogenides exhibit interesting optoelectronic properties owing to their peculiar band structures originating from the valley degree of freedom. Although the optical generation and detection of valley polarization has been demonstrated, it has been difficult to realize active valley-dependent functions suitable for device applications. We report an electrically switchable, circularly polarized light source based on the material's valley
The fullerene C(60) can be converted into two different structures by high pressure and temperature. They are metastable and revert to pristine C(60) on reheating to 300 degrees C at ambient pressure. For synthesis temperatures between 300 degrees and 400 degrees C and pressures of 5 gigapascals, a nominal face-centered-cubic structure is produced with a lattice parameter a(o) = 13.6 angstroms. When treated at 500 degrees to 800 degrees C at the same pressure, C(60) transforms into a rhombohedra
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