Dae Soo Lee

We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical prope

The enhancement of the functional properties of materials at reduced dimensions is crucial for continuous advancements in nanoelectronic applications. Here, we report that the scale reduction leads to the emergence of an important functional property, ferroelectricity, challenging the long-standing notion that ferroelectricity is inevitably suppressed at the scale of a few nanometers. A combination of theoretical calculations, electrical measurements, and structural analyses provides evidence of

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO${}_{3}$/SrRuO${}_{3}$ thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO${}_{3}$ interface of as-grown samples, a defective layer (possibly an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization directi

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film sy

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

Phase transitions in correlated materials can be manipulated at the nanoscale to yield emergent functional properties, promising new paradigms for nanoelectronics and nanophotonics. Vanadium dioxide (VO 2 ), an archetypal correlated material, exhibits a metal–insulator transition (MIT) above room temperature. At the thicknesses required for heterostructure applications, such as an optical modulator discussed here, the strain state of VO 2 largely determines the MIT dynamics critical to the devic

Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.

Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m(-1) by flexoelectricity, large enough to affect the physical properties of

Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern th

Due to the characteristics of a data stream, it is very important to confine the memory usage of a data mining process regardless of the amount of information generated in the data stream. For this purpose, this paper proposes a CP-tree (compressed-prefix tree) that can be effectively used in finding either frequent or maximal frequent itemsets over an online data stream. Unlike a prefix tree, a node of a CP-tree can maintain the information of several item-sets together. Based on this character

Abstract Nonequilibrium atomic structures can host exotic and technologically relevant properties in otherwise conventional materials. Oxygen octahedral rotation forms a fundamental atomic distortion in perovskite oxides, but only a few patterns are predominantly present at equilibrium. This has restricted the range of possible properties and functions of perovskite oxides, necessitating the utilization of nonequilibrium patterns of octahedral rotation. Here, we report that a designed metastable

The authors investigated the role of oxygen partial pressure on the epitaxial growth of an artificial hexagonal GdMnO3 phase, which should exist in an orthorhombic structure in bulk. The hexagonal GdMnO3 film showed diverse, but obvious, magnetic phase transitions with highly enhanced ferromagnetic properties. Its remnant magnetization at 4.2K is higher than those of other hexagonal RMnO3 (R=Ho, Er, and Yb) compounds, and the Curie temperature increases by around 25K. The results demonstrate tha

We develop a method to determine size and size distribution (30–150 nm) of polydisperse nanoparticles using a laser ablation/ ionization time-of-flight single-particle mass spectrometer that extends the work first described by Reents and Ge. We found a composition independent “power law” dependence between the total peak area and original particle volume that enables one to determine particle volume directly from a particles mass spectrum. This power-law relationship suggests that some ions abla