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Donghwa Lee

Pohang University of Science and Technology · Engineering

About the Lab

Professor Donghwa Lee's research lab specializes in advanced functional materials for energy and electronic applications, with a strong focus on perovskite-based optoelectronics and resistive memory devices. The lab investigates the fundamental properties and practical applications of halide perovskites—both lead-based and lead-free—aiming to enhance stability, efficiency, and functionality in solar cells and memristors. Additionally, the lab explores 2D materials, such as molybdenum disulfide and fluorinated graphene, for high-sensitivity chemical sensing, particularly for trace gas detection at room temperature. Their work combines advanced synthesis, theoretical modeling, and nanoscale characterization to develop next-generation materials for sustainable energy and intelligent electronics.

perovskite semiconductorsresistive memory2D materialschemical sensingnanomaterials

Research Overview

Papers
254
Total Citations
7,771
Papers (5y)
75
Primary Field
Engineering

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
75total
2022
2023
2024
2025
2026
Citations per year (5y)
860total
20222023202420252026

Selected Papers

15
1
Article|219 citations·2012
Vision-based object detection and tracking for autonomous navigation of underwater robots
Donghwa Lee, Kevin Gonyop Kim, Donghoon Kim, Hyun Myung, Hyun‐Taek Choi
SJR Q1Ocean Engineering
Ocean EngineeringEngineering
2
Article|169 citations·2017
Stabilizing the Ag Electrode and Reducing J–V Hysteresis through Suppression of Iodide Migration in Perovskite Solar Cells
Jiangzhao Chen, Donghwa Lee, Nam‐Gyu Park
SJR Q1ACS Applied Materials & Interfaces

Hysteresis and stability issues in perovskite solar cell (PSCs) hinder their commercialization. Here, we report an effective and reproducible approach for enhancing the stability of and suppressing the hysteresis in PSCs by incorporating a small quantity of two-dimensional (2D) PEA 2 PbI 4 [PEA = C 6 H 5 (CH 2 ) 2 NH 3 ] in three-dimensional (3D) MAPbI 3 [MA = CH 3 NH 3 ] [denoted as (PEA 2 PbI 4 ) x (MAPbI 3 )], where the perovskite films were fabricated by the Lewis acid–base adduct method. A

Electrical and Electronic EngineeringEngineering
3
Article|165 citations·2009
Mixed Bloch-Néel-Ising character of180°ferroelectric domain walls
Donghwa Lee, Rakesh Kumar Behera, Pingping Wu, Haixuan Xu, Yulan Li, Susan B. Sinnott, Simon R. Phillpot, Long‐Qing Chen, Venkatraman Gopalan
SJR Q1Physical Review B

Ferroelectric $180\ifmmode^\circ\else\textdegree\fi{}$ domain walls are well-known to be predominantly Ising-like. Using density functional theory, and molecular dynamics simulations, the $180\ifmmode^\circ\else\textdegree\fi{}$ domain walls in prototypical ferroelectrics lead titanate $({\text{PbTiO}}_{3})$ and lithium niobate $({\text{LiNbO}}_{3})$ are shown to have mixed character; while predominantly Ising-like, they also manifest some Bloch- and N\'eel-like character. Phase-field calculatio

Materials ChemistryMaterials Science
4
Article|135 citations·2023
Drastic Gas Sensing Selectivity in 2-Dimensional MoS2 Nanoflakes by Noble Metal Decoration
Taehoon Kim, Tae Hyung Lee, Seo Yun Park, Tae Hoon Eom, Incheol Cho, Yeonhoo Kim, Changyeon Kim, Sol A Lee, Min‐Ju Choi, Jun Min Suh, In Sung Hwang, Donghwa Lee
SJR Q1ACS Nano

Noble metal nanoparticle decoration is a representative strategy to enhance selectivity for fabricating chemical sensor arrays based on the 2-dimensional (2D) semiconductor material, represented by molybdenum disulfide (MoS 2 ). However, the mechanism of selectivity tuning by noble metal decoration on 2D materials has not been fully elucidated. Here, we successfully decorated noble metal nanoparticles on MoS 2 flakes by the solution process without using reducing agents. The MoS 2 flakes showed

Electrical and Electronic EngineeringEngineering
5
Article|134 citations·2021
Passivating buried interface via self-assembled novel sulfonium salt toward stable and efficient perovskite solar cells
Xin Zuo, Bo‐Hyung Kim, Baibai Liu, Dongmei He, Le Bai, Wenqi Wang, Cunyun Xu, Qunliang Song, Chunyang Jia, Zhigang Zang, Donghwa Lee, Xiong Li
SJR Q1Chemical Engineering Journal
Electrical and Electronic EngineeringEngineering
6
Article|123 citations·2018
All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory
Can Cuhadar, Seul‐Gi Kim, June‐Mo Yang, Ja-Young Seo, Donghwa Lee, Nam‐Gyu Park
SJR Q1ACS Applied Materials & Interfaces

As silicon-based metal oxide semiconductor field effect transistors get closer to their scaling limit, the importance of resistive random-access memory devices increases due to their low power consumption, high endurance and retention performance, scalability, and fast switching speed. In the last couple of years, organic-inorganic lead halide perovskites have been used for resistive switching applications, where they outperformed conventional metal oxides in terms of large on/off ratio and low

Electrical and Electronic EngineeringEngineering
7
Article|104 citations·2018
1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory
June‐Mo Yang, Seul‐Gi Kim, Ja‐Young Seo, Can Cuhadar, Dae‐Yong Son, Donghwa Lee, Nam‐Gyu Park
SJR Q1Advanced Electronic MaterialsOA

Abstract Organic–inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt‐scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH 2 ) 2 PbI 3 (FAPbI 3 ) depending on structural phase is reported. It is found that 1D hexagonal FAPbI 3 (δ‐FAPbI 3 ), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (

Electrical and Electronic EngineeringEngineering
8
Article|100 citations·2017
Chemically fluorinated graphene oxide for room temperature ammonia detection at ppb levels
Yeon Hoo Kim, Ji Soo Park, You-Rim Choi, Seo Yun Park, Seon Yong Lee, Woonbae Sohn, Young-Seok Shim, Jong‐Heun Lee, Chong Rae Park, Yong Seok Choi, Byung Hee Hong, Jung Hun Lee
SJR Q1Journal of Materials Chemistry A

Detection of ppb level ammonia at room temperature is demonstrated using chemically fluorinated graphene oxide (CFGO). Fluorine adatom extremely enhances ammonia sensing capabilities through the changes of the charge distributions on adjacent functional groups, resulting in the variation in gas adsorption energies.

Electrical and Electronic EngineeringEngineering
9
Article|95 citations·2019
Strain‐Mediated Phase Stabilization: A New Strategy for Ultrastable α‐CsPbI3 Perovskite by Nanoconfined Growth
Sunihl Ma, Seong Hun Kim, Beomjin Jeong, Hyeok‐Chan Kwon, Seongcheol Yun, Gyumin Jang, Hyunha Yang, Cheolmin Park, Donghwa Lee, Jooho Moon
SJR Q1Small

Abstract All‐inorganic cesium lead triiodide (CsPbI 3 ) perovskite is considered a promising solution‐processable semiconductor for highly stable optoelectronic and photovoltaic applications. However, despite its excellent optoelectronic properties, the phase instability of CsPbI 3 poses a critical hurdle for practical application. In this study, a novel stain‐mediated phase stabilization strategy is demonstrated to significantly enhance the phase stability of cubic α‐phase CsPbI 3 . Careful con

Electrical and Electronic EngineeringEngineering
10
Article|80 citations·2021
Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
Young‐Jun Park, Seong Hun Kim, Donghwa Lee, Jang‐Sik Lee
SJR Q1Nature CommunicationsOA

Abstract Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using a high-throughput screening based on first-principles cal

Electrical and Electronic EngineeringEngineering
11
Article|76 citations·2020
Effect of oxygen vacancies on electrical conductivity of La0.5Sr0.5FeO3−δ from first-principles calculations
Yonghun Shin, Kyung‐Yeon Doh, Seong Hun Kim, Jun Ho Lee, Hohan Bae, Sun‐Ju Song, Donghwa Lee
SJR Q1Journal of Materials Chemistry A

Metal to semiconductor transition by hole compensation of excess electrons from <italic>V</italic><sub>O</sub> and localized <italic>V</italic><sub>O</sub> state in La<sub>0.5</sub>Sr<sub>0.5</sub>FeO<sub>3−δ</sub> under low <italic>P</italic><sub>O2</sub>.

Materials ChemistryMaterials Science
12
Article|58 citations·2019
Au decoration of a graphene microchannel for self-activated chemoresistive flexible gas sensors with substantially enhanced response to hydrogen
Yeonhoo Kim, Yong Seok Choi, Seo Yun Park, Taehoon Kim, Seung-Pyo Hong, Tae Hyung Lee, Cheon Woo Moon, Jong‐Heun Lee, Donghwa Lee, Byung Hee Hong, Ho Won Jang
SJR Q1NanoscaleOA

Graphene is one of the most promising materials for high-performance gas sensors due to its unique properties such as high sensitivity at room temperature, transparency, and flexibility. However, the low selectivity and irreversible behavior of graphene-based gas sensors are major problems. Here, we present unprecedented room temperature hydrogen detection by Au nanoclusters supported on self-activated graphene. Compared to pristine graphene sensors, the Au-decorated graphene sensors exhibit hig

Electrical and Electronic EngineeringEngineering
13
Article|58 citations·2010
Structure and energetics of ferroelectric domain walls inLiNbO3from atomic-level simulations
Donghwa Lee, Haixuan Xu, Volkmar Dierolf, Venkatraman Gopalan, Simon R. Phillpot
SJR Q1Physical Review B

Atomistic simulations with empirical potentials and density-functional theory calculations are used to characterize the structure, energetics, and ferroelectric properties of domain walls in ${\text{LiNbO}}_{3}$. The two methods yield similar polarization patterns and atomic structures at the domain walls. The structure of the domain wall on the mixed anion-cation planes is very different from that of the domain wall on planes of alternating cations and anions. The breaking of the uniaxial symme

Atomic and Molecular Physics, and OpticsPhysics and Astronomy
14
Article|56 citations·2021
Edge-exposed WS2 on 1D nanostructures for highly selective NO2 sensor at room temperature
Jun Min Suh, Ki Chang Kwon, Tae Hyung Lee, Changyeon Kim, Chung Won Lee, Young Geun Song, Min‐Ju Choi, Seokhoon Choi, Sung Hwan Cho, Sungkyu Kim, Mohammadreza Shokouhimehr, Chong‐Yun Kang
SJR Q1Sensors and Actuators B Chemical
Electrical and Electronic EngineeringEngineering
15
Article|47 citations·2014
Identification of the Local Sources of Paramagnetic Noise in Superconducting Qubit Devices Fabricated onα−Al2O3Substrates Using Density-Functional Calculations
Donghwa Lee, Jonathan L. DuBois, Vincenzo Lordi
SJR Q1Physical Review Letters

Effective methods for decoupling superconducting qubits (SQs) from parasitic environmental noise sources are critical for increasing their lifetime and phase fidelity. While considerable progress has been made in this area, the microscopic origin of noise remains largely unknown. In this work, first principles density functional theory calculations are employed to identify the microscopic origins of magnetic noise sources in SQs on an α-Al2O3 substrate. The results indicate that it is unlikely t

Atomic and Molecular Physics, and OpticsPhysics and Astronomy

Research Areas

Electrical and Electronic EngineeringMaterials ChemistryAerospace EngineeringAtomic and Molecular Physics, and OpticsPolymers and PlasticsRenewable Energy, Sustainability and the Environment

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