Hong Changhee

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3.36 eV and 3.15–3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted, donor-acceptor pair recombination respectively, on the basis of observed temperature and intensity dep

This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Current-voltage characteristics of the graphene/p-GaN contacts with ultrathin Au, Ni, and NiO(x) interlayers were studied using transmission line model with circular contact geometry. Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the conta

For seminal plasma‐allergic patients to achieve pregnancy, immunotherapy or artificial insemination is recommended. However, these modalities require complicated procedures. We recently treated a patient with human seminal plasma anaphylaxis who was successfully desensitized after intravaginal rush desensitization and became spontaneously pregnant. She had a healthy full‐term infant. With immunoblotting, we identified multiple allergens in her husband's seminal plasma, with molecular masses such

The effect of ZnO nanostructures on the light output power of 375 nm near-ultraviolet light-emitting diodes (NUV-LEDs) was investigated by comparing one-dimensional (1D) nanorods (NR-ZnO) with two-dimensional (2D) nanosheets (NS-ZnO). ZnO nanostructures were grown on a planar indium tin oxide (ITO) by solution based method at low temperature of 90°C without degradation of the forward voltage. At an injection current of 100 mA, the light output efficiency of NUV-LED with NR-ZnO was enhanced by ar