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Hong Seok Oh

Yonsei University · Engineering

About the Lab

Professor Hong Seok Oh's research lab specializes in the development of advanced 2D materials and heteroepitaxial semiconductor nanostructures for next-generation flexible and wearable electronics. The lab focuses on van der Waals epitaxy, large-scale growth of hexagonal boron nitride (h-BN) films, and the integration of 1D–2D hybrid structures such as ZnO nanotubes on graphene for high-performance vertical field-effect transistors. A key innovation lies in combining scalable, transferable 2D materials with precise control over nucleation and growth to enable high-quality, flexible inorganic optoelectronic and electronic devices. The lab also explores tactile sensing systems with real-time feedback, leveraging advanced piezoelectric thin-film transistors for robotics and human-machine interfaces.

2D materialsvan der Waals epitaxyflexible electronicstactile sensingheterostructure integration

Research Overview

Papers
136
Total Citations
3,126
Papers (5y)
46
Primary Field
Engineering

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
46total
2022
2023
2024
2025
2026
Citations per year (5y)
345total
20222023202420252026

Selected Papers

15
1
Article|533 citations·2006
A Multilevel Model of Group Social Capital
Hongseok Oh, Giuseppe Labianca, Myung-Ho Chung
SJR Q1Academy of Management Review

We introduce the concept of group social capital—the set of resources made available to a group through members' social relationships within the social structure of the group and in the broader formal and informal structure of the organization. We argue that greater group social capital resources lead to greater group effectiveness and that there are many different conduits through which group social capital resources flow. We present a multilevel, multidimensional model arguing that an optimal

Sociology and Political ScienceSocial Sciences
2
Article|301 citations·2004
Group Social Capital and Group Effectiveness: The Role of Informal Socializing Ties
Hongseok Oh, Myung-Ho Chung, Giuseppe Labianca
SJR Q1Academy of Management Journal
Sociology and Political ScienceSocial Sciences
3
Article|205 citations·2008
The ripple effect of personality on social structure: Self-monitoring origins of network brokerage.
Hongseok Oh, Martín Kilduff
SJR Q1Journal of Applied Psychology

Despite growing interest in social network brokerage, its psychological antecedents have been neglected. One possibility is that brokerage relates to self-monitoring personality orientation. High self-monitors, relative to low self-monitors, in adapting their self-presentations to the demands of different groups, may occupy positions as brokers between disconnected social worlds. For 162 Korean expatriate entrepreneurs in a Canadian urban area, the results showed that those high in self-monitori

Sociology and Political ScienceSocial Sciences
4
Article|172 citations·2020
Scalable tactile sensor arrays on flexible substrates with high spatiotemporal resolution enabling slip and grip for closed-loop robotics
Hongseok Oh, Gyu‐Chul Yi, Michael C. Yip, Shadi A. Dayeh
SJR Q1Science AdvancesOA

We report large-scale and multiplexed tactile sensors with submillimeter-scale shear sensation and autonomous and real-time closed-loop grip adjustment. We leveraged dual-gate piezoelectric zinc oxide (ZnO) thin-film transistors (TFTs) fabricated on flexible substrates to record normal and shear forces with high sensitivity over a broad range of forces. An individual ZnO TFT can intrinsically sense, amplify, and multiplex force signals, allowing ease of scalability for multiplexing from hundreds

Biomedical EngineeringEngineering
5
Article|55 citations·2014
Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
Hongseok Oh, Young Joon Hong, Kun-Su Kim, Sangmoon Yoon, Hyeonjun Baek, Seounghun Kang, Young‐Kyun Kwon, Miyoung Kim, Gyu‐Chul Yi
SJR Q1NPG Asia MaterialsOA

Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shape-and morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for an architectured semiconductor integration on the 2-d layered materials. The vdW surface feature of the 2-d nanomaterials, because of the sur

Materials ChemistryMaterials Science
6
Article|31 citations·2018
Vertical ZnO Nanotube Transistor on a Graphene Film for Flexible Inorganic Electronics
Hongseok Oh, JunBeom Park, Woojin Choi, Heehun Kim, Youngbin Tchoe, Arpana Agrawal, Gyu‐Chul Yi
SJR Q1Small

Abstract The bottom‐up integration of a 1D–2D hybrid semiconductor nanostructure into a vertical field‐effect transistor (VFET) for use in flexible inorganic electronics is reported. Zinc oxide (ZnO) nanotubes on graphene film is used as an example. The VFET is fabricated by growing position‐ and dimension‐controlled single crystal ZnO nanotubes vertically on a large graphene film. The graphene film, which acts as the substrate, provides a bottom electrical contact to the nanotubes. Due to the h

Materials ChemistryMaterials Science
7
Article|30 citations·2016
Centimeter-sized epitaxial h-BN films
Hongseok Oh, Janghyun Jo, Youngbin Tchoe, Hosang Yoon, Hyun Hwi Lee, Sung‐Soo Kim, Miyoung Kim, Byeong‐Hyeok Sohn, Gyu‐Chul Yi
SJR Q1NPG Asia MaterialsOA

We report the growth and transfer of centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films using Ni(111) single-crystal substrates. The h-BN films were heteroepitaxially grown on 10 × 10 mm2 or 20 × 20 mm2 Ni(111) substrates using atmospheric pressure chemical vapor deposition with a single ammonia-borane precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-u

Materials ChemistryMaterials Science
8
Article|26 citations·2024
Physical Reservoir Computing Using Tellurium-Based Gate-Tunable Artificial Photonic Synapses
Hyerin Jo, Jiseong Jang, Hyeon Jung Park, Huigu Lee, Sung Jin An, Jin Pyo Hong, Mun Seok Jeong, Hongseok Oh
SJR Q1ACS Nano

) electrodes. A thorough investigation of the field-dependent persistent photoconductivity (PPC) of the Te channel revealed that the relaxation speed of the transient photocurrent depended on the gate bias. Utilizing the PPC property, the Te device served as an excellent photonic synapse under light pulse stimulus, exhibiting multiple synaptic characteristics such as excitatory postsynaptic current and paired-pulse facilitation, as well as highly linear potentiation-depression characteristics; a

Artificial IntelligenceComputer Science
9
Article|19 citations·2022
IGZO synaptic thin-film transistors with embedded AlO x charge-trapping layers
Yeojin Lee, Hyerin Jo, Kooktae Kim, Hyobin Yoo, Hyeonjun Baek, Dong Ryeol Lee, Hongseok Oh
SJR Q2Applied Physics Express

Abstract We report the fabrication and characterization of indium gallium zinc oxide (IGZO)-based synaptic thin-film transistors. Radio-frequency magnetron-sputtered AlO x thin films are embedded in the IGZO channel as charge-trapping layers to provide synaptic behavior. The voltage pulse introduced at the gate electrodes traps or de-traps charges in the embedded AlO x layer thus modulates the channel current, which in turn leads to the ability to mimic biological synaptic behaviors such as exci

Electrical and Electronic EngineeringEngineering
10
Review|17 citations·2020
Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices
Hongseok Oh, Shadi A. Dayeh
SJR Q1SensorsOA

Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classif

Biomedical EngineeringEngineering
11
Article|15 citations·2021
Synthesis of Atomically Thin h-BN Layers Using BCl3 and NH3 by Sequential-Pulsed Chemical Vapor Deposition on Cu Foil
Hongseok Oh, Gyu‐Chul Yi
SJR Q1NanomaterialsOA

The chemical vapor deposition of hexagonal boron nitride layers from BCl3 and NH3 is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the synthesis of polycrystalline hexagonal boron nitride (h-BN) layers on copper foil using BCl3 and NH3. The sequential pulse injection of precursors leads to the formation of atomically thin h-BN layers with a

Materials ChemistryMaterials Science
12
Article|15 citations·2025
Tunable Emission Properties of Indolizine-Based Aggregation-Induced Emission Luminogens for White-Light Emission
Taegwan Kim, Eunbee Baek, Hyunsoo Kim, Jae‐Ho Han, Yun-Sang Lee, Hongseok Oh, Kwang-Hwi Cho, Jonghoon Kim
SJR Q1JACS AuOA

Unlike conventional fluorophores experiencing aggregation-caused quenching (ACQ) in the solid state, aggregation-induced emission (AIE) luminogens (AIEgens) exhibit enhanced fluorescence upon aggregation. This property renders AIEgens promising for various technological applications. However, developing red-emitting AIEgens with high fluorescence efficiency remains challenging due to structural constraints. Compact red-light-emitting AIEgens hold great potential, as their small, simple fluoresce

Materials ChemistryMaterials Science
13
Article|13 citations·2024
Highly Sensitive and Fast Responding Flexible Force Sensors Using ZnO/ZnMgO Coaxial Nanotubes on Graphene Layers for Breath Sensing
Asad Ali, Jamin Lee, Kyoungho Kim, Hongseok Oh, Gyu‐Chul Yi
SJR Q1Advanced Healthcare MaterialsOA

The authors report the fabrication of highly sensitive, rapidly responding flexible force sensors using ZnO/ZnMgO coaxial nanotubes grown on graphene layers and their applications in sleep apnea monitoring. Flexible force sensors are fabricated by forming Schottky contacts to the nanotube array, followed by the mechanical release of the entire structure from the host substrate. The electrical characteristics of ZnO and ZnO/ZnMgO nanotube-based sensors are thoroughly investigated and compared. Im

Biomedical EngineeringEngineering
14
Article|12 citations·2024
Fabrication of an In-rich IGZO TFT by Co-sputtering of In2O3 and IGZO and Characterization of its Compensated Positive Bias Stress Properties
Yedam Lee, Hyunsoo Kim, Hyerin Jo, Hongseok Oh
SJR Q3Transactions on Electrical and Electronic Materials
Electrical and Electronic EngineeringEngineering
15
Article|8 citations·2023
MeaSSUre:I-V: Open software for transistor characterization using source-meter units
Hongseok Oh, Hyun‐Soo Kim, Hyerin Jo
SJR Q3SoftwareXOA

Despite the importance of transistors in modern electronics, transistor characterization requires expensive instruments that are not affordable for many researchers, engineers and educators. Here, we present software that can control source-meter units (SMUs) for current–voltage (I–V) characterization of field-effect transistors, bipolar junction transistors and general two-terminal devices. The software provides a graphical user interface that allows the user to perform parameter setup, real-ti

Electrical and Electronic EngineeringEngineering

Research Areas

Electrical and Electronic EngineeringSociology and Political ScienceMaterials ChemistryOrganizational Behavior and Human Resource ManagementBiomedical EngineeringCondensed Matter Physics

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