Jaesung Park
Pohang University of Science and Technology · Engineering
About the Lab
Professor Jaesung Park's research lab specializes in advanced nanoscale electronic devices for next-generation computing and biomedical applications. The lab focuses on resistive random-access memory (RRAM) systems, particularly HfO₂- and TiOₓ-based resistive switching devices, for neuromorphic computing and artificial synapse emulation. A key research direction involves optimizing pulse programming schemes and device architecture to achieve precise multilevel conductance states with high linearity and retention. Additionally, the lab develops innovative bio-inspired nanovehicles—such as artificial exosome-like nanovesicles—using microfluidic platforms for targeted delivery of therapeutic biomolecules.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15We propose TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based resistive switching device for neuromorphic synapse applications. This device is capable of 64-levels conductance states because of their optimized interface between the metal electrode and the TiOx film. To compensate the change in switching power with increasing pulse number, we propose the use of fixed voltage and current pulses in potentiation and depression conditions
Exosomes/microvesicles are known to shuttle biological signals between cells, possibly by transferring biological signal components such as encapsulated RNAs and proteins, plasma membrane proteins, or both. Therefore exosomes are being considered for use as RNA and protein delivery vehicles for various therapeutic applications. However, living cells in nature secrete only a small number of exosomes, and procedures to collect them are complex; these complications impede their use in mass delivery
In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change the resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that the MLC relates to the size of the conductive filament involved
We report on a 1-transisor/2-resistor (1T2R) synapse device with improved conductance linearity and conductance ratio under an identical pulse condition for hardware neural networks with high pattern-recognition accuracy. Utilizing an additional series-connected resistor, the conductance linearity of a synapse device was significantly improved owing to the reduced initial voltage drop on an resistive RAM (RRAM) device during depression conditions. Moreover, to maximize the conductance ratio of a
Microstereolithography (MSTL) is a SFF technology that has been used to fabricate 3-D scaffolds in tissue engineering. Projection-based microstereolithography (pMSTL) offers the advantage of increased fabrication speed compared with a line-scan-based MSTL by creating 2-D patterns with single-section image exposure and then stacking them. To fabricate a complex 3-D structure for a target tissue (liver, blood vessel, etc.) using the pMSTL system, we introduce a new algorithm that automatically gen
We investigate the effect of Cu concentration On-state resistance retention characteristics of W/Cu/Ti/HfO2/Pt memory cell. The development of RRAM device for application depends on the understanding of the failure mechanism and the key parameters for device optimization. In this study, we develop analytical expression for cations (Cu+) diffusion model using Gaussian distribution for detailed analysis of data retention time at high temperature. It is found that the improvement of data retention
We implemented a convolution operation in a convolutional neural network by introducing a 3-D integrated TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based resistive switching device (RSD) array to act as the kernel. The 3-D integrated TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based RSD exhibits a gradual SET/RESET behavior, which enables multilevel characteristics. A
We demonstrate a selector device with excellent performances (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , switching speed <; 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved
We investigated the reset breakdown phenomenon of HfOx-based resistive memory for reliable switching operation in a fully CMOS compatible stack. Through the understanding on the effect of electrode materials and device area, our findings show that observed failure is attributed to additional oxygen vacancies close to the electrode interface, where switching is occurred. Therefore, RuOx serving as an oxygen diffusion barrier was introduced to suppress the generation of unwanted oxygen vacancies b
Mechanical properties of Y2O3-containing tetragonal ZrO2 polycrystals(Y-TZP) were investigated. Several additives were used to modify the hardness and fracture toughness of Y-TZP. The effects of these individual additives were discussed and their interactions were also analysed. Each additive, such as CoO, Fe2O3, MnO2 was found to deteriorate the mechanical properties of Y-TZP when it was used singly. But the fracture toughness of Y-TZP was significantly improved when these additives and Al2O3 w
This chapter is a collection of selected abstracts presented at the 10th Asian-Australasian Conference on Precision Agriculture, held from October 24th to 26th in Putrajaya, Malaysia. It aims to emphasize the transformative potential of technology in precision agriculture and smart farming. The featured studies highlight the transformative impact of technology and current improvements in agriculture, offering modern solutions including machine learning, robotics, remote sensing, and geographic i
Research Areas
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