Jinho Ahn

Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for MOS gate dielectric application is presented. N/sub 2/O-nitrided thermal SiO/sub 2/ shows much tighter distribution in time-dependent dielectric breakdown (TDDB) characteristics than thermal oxide. MOSFETs with gate dielectric prepared by this method show improved initial performance and enhanced device reliability compared to those with thermal gate oxide. These improvements are attributed to the incorporation of a small am

Herein, Ag-ZnO core-shell nanoparticles (NPs) with enhanced photocatalytic activity were prepared by coating Ag metal cores with ZnO semiconductor shells through atomic layer deposition (ALD). Instrumental analysis revealed that the ultra-thin and conformal nature of the shell allowed the core-shell NPs to simultaneously exploit the photocatalytic properties of ZnO and the plasmonic properties of Ag. In a rhodamine B photodegradation test performed under artificial sunlight, Ag-ZnO core-shell NP

The Y₂O₃ films grown with a new and heteroleptic liquid Y precursor, (iPrCp)₂Y(iPr-amd), have been investigated with chemical properties of precursor, atomic layer deposition process, and material characterization of the deposited film and its non-volatile resistive switching behaviour.

Abstract Despite their high energy densities, Li‐rich layered oxides suffer from low capacity retention and continuous voltage decay caused by the migration of transition‐metal cations into the Li layers. The cation migration stabilizes oxidized oxygen anions through the decoordination of oxygen from the metal once the anions participate in the redox reaction. Structural disordering is thus considered inevitable in most Li‐rich layered oxides. However, herein, a Mg‐substituted Li‐rich layered ox

In this letter, the electrical properties of thin low-pressure chemical vapor deposited (LPCVD) SiO2 annealed in N2O ambient have been studied and compared with thermal oxide of identical thickness. It is shown that N2O-annealed CVD oxide exhibits less interface state generation and less flatband voltage shift under constant current stress than thermal oxide. It also has excellent uniformity and comparable breakdown characteristics. An oxynitride film formation at the Si/SiO2 interface by anneal

Time-dependent dielectric breakdown (TDDB) characteristics of MOS capacitors with thin (120-AA) N/sub 2/O gate oxide under dynamic unipolar and bipolar stress have been studied and compared to those with control thermal gate oxide of identical thickness. Results show that N/sub 2/O oxide has significant improvement in t/sub BD/ (2*under-V/sub g/ unipolar stress, 20*under+V/sub g/ unipolar stress, and 10*under bipolar stress). The improvement of t/sub BD/ in N/sub 2/O oxide is attributed to the s

MOSFETs and MOS capacitors with ultrathin (65 AA) low-pressure chemical vapor deposition (LPCVD) gate SiO/sub 2/ have been fabricated and compared to those with thermal SiO/sub 2/ of identical thickness. Results show that the devices with LPCVD SiO/sub 2/ have higher transconductance and current drivability, better channel hot-carrier immunity, lower defect density, and better time-dependent dielectric breakdown (TDDB) characteristics than devices with conventional thermal SiO/sub 2/.< <ETX xmln

Neuromorphic computing, which mimics the structure and principles of the human brain, has the potential to facilitate the hardware implementation of next-generation artificial intelligence systems and process large amounts of data with very low power consumption. Among them, the XNOR synapse-based Binary Neural Network (BNN) has been attracting attention due to its compact neural network parameter size and low hardware cost. The previous XNOR synapse has drawbacks, such as a trade-off between ce

Radiation-hardened, fluorinated gate oxides have been obtained by rapid thermal processing of silicon in O2 with diluted NF3. Diluted NF3 is used as a source of fluorine and is introduced during the initial stage of rapid thermal processing. It is found that optimum amounts of fluorine incorporated at the Si/SiO2 interface improve resistance against x-ray radiation; however, excessive amounts of fluorine degrade the radiation hardness.

Abstract The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunneling electroresistance (TER) ratio of over 200,000 and decade-long retention characteristics. By introducing asymmetric oxygen vacancies through the strategic use of indium oxide (InO x ) layer, we en

An ultrahigh-vaccuum electron cyclotron resonance plasma chemical-vapor deposition system with a substrate heating component has been applied to deposit silicon nitride film. Low background pressure (∼5×10−9 Torr) and efficient plasma excitation at a low deposition pressure (&amp;lt;10−3 Torr) result in a low oxygen impurity content in the silicon nitride film. Process flexibility of this system, i.e., control of the SiH4 to NH3 flow ratio, deposition pressure, and substrate temperature, allows

In this letter, the stress-induced leakage current (SILC) is studied in N2O gate oxide. Compared to control thermal oxide grown in O2, N2O oxide shows suppressed SILC, and the suppression is more pronounced under substrate electron injection. Moreover, the dependence of SILC on stress current density is smaller for N2O oxide. The suppressed SILC in N2O oxide is attributed to the nitrogen incorporation during N2O oxidation, which reduces the electron trap generation rate and the density of weak o