Kwang Hyung Lee
Korea Advanced Institute of Science and Technology · Engineering
About the Lab
Professor Kwang Hyung Lee's research lab specializes in the development of two-dimensional (2D) semiconductor-based electronic and optoelectronic devices, with a focus on molybdenum disulfide (MoS₂) and organic-inorganic hybrid heterostructures. The lab explores high-performance field-effect transistors, nonvolatile ferroelectric memory devices, and flexible thin-film transistors, emphasizing low-voltage operation, high mobility, and excellent retention characteristics. Key research directions include interface engineering, energy bandgap tuning via layer control, and the integration of 2D materials with ferroelectric polymers such as P(VDF-TrFE) for next-generation memory and sensing applications.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15We report on the fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode. Our devices with triple MoS(2) layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS(2) layers. The photoelectric probing on working transistors with the nanosheet
Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(V·s). Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such
Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.
Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-
We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1–0.18 cm2/V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5–8 V and also exhibits WR-ER curre
Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel.
The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13nm-thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (AlOx)-self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+-Si substrate. The AlOx-SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233nF∕cm2 on ITO glass and on n+-Si substrate, respectively, along with a high dielectric strength of 4MV∕cm in both cases.
Defect identification has been a significant task in various fields to prevent the potential problems caused by imperfection. There is great attention for developing technology to accurately extract defect information from the image using a computing system without human error. However, image analysis using conventional computing technology based on Von Neumann structure is facing bottlenecks to efficiently process the huge volume of input data at low power and high speed. Herein efficient defec
A geotextile tube is a type of geocontainer typically filled with sandy slurries and fine-grained dredged sediments. Its performance in strength, dewatering, fine-particle retention, and stacked stability has been studied extensively. However, very little is understood about the shape-deformation behavior of geotextile tubes. In this paper, slurry-settlement, constant head permeability, and seepage-force tests were conducted to determine the geocontainers’ geotechnical design parameters. The cha
MOTIVATION: Gene set analysis has become an important tool for the functional interpretation of high-throughput gene expression datasets. Moreover, pattern analyses based on inferred gene set activities of individual samples have shown the ability to identify more robust disease signatures than individual gene-based pattern analyses. Although a number of approaches have been proposed for gene set-based pattern analysis, the combinatorial influence of deregulated gene sets on disease phenotype cl
An almost transparent image pixel on glass is demonstrated for the first time under visible and UV illumination at 3 V. The pixel is composed of a pentacene thin-film transistor and a serially connected pentacene/ZnO photodiode, with or without a 6,13-pentacenequinone phosphor layer that was deposited on the photodiode for more efficient light detection.
BACKGROUND: Alzheimer's disease (AD) is a neurodegenerative and progressive disorder that results in brain malfunctions. Resting-state (RS) functional magnetic resonance imaging (fMRI) techniques have been successfully applied for quantifying brain activities of both Alzheimer's disease (AD) and amnestic mild cognitive impairment (aMCI) patients. Region-based approaches are widely utilized to classify patients from cognitively normal subjects (CN). Nevertheless, region-based approaches have a fe
Research Areas
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