Sang Hyuk Im

Bright organic/inorganic hybrid perov-skite light-emitting diodes (PrLEDs) are realized by using CH3 NH3 PbBr3 as an emitting layer and self-organized buffer hole-injection layer (Buf-HIL). The PrLEDs show high luminance, current efficiency, and EQE of 417 cd m(-2) , 0.577 cd A(-1) , and 0.125%, respectively. Buf-HIL can facilitate hole injection into CH3 NH3 PbBr3 as well as block exciton quenching.

The inverted CH₃NH₃PbI₃ planar hybrid solar cells exhibited better device efficiency and stability and lower hysteresis than the normal cells.

Organolead-halide-perovskite-based solar cells have recently received significant attention due to their excellent photovoltaic performance and low cost. The general formula of this perovskite light harvester is RPbX 3, where R and X stand for a monovalent organic cation and halide anion, respectively. Structures of the perovskite solar cell are designed based on the function of the perovskite. Organolead halide perovskites can be used either as sensitizers or n - or p -type light harvesters. Ra

One lump or two! Selective etching of twinned seeds, mediated by HCl and the oxygen in air, resulted in high yields of perfect single-crystal silver nanocubes in a range of sizes (30–130 nm). The chloride ion enhances oxidation and prevents aggregation, while the proton decreases the rate of reduction and facilitates etching through the formation of nitric acid.

Abstract Readily commercializable and cost‐effective next‐generation CsPbBr 3 perovskite nanocrystals (PNCs) based X‐ray detectors are demonstrated. The PNCs‐based X‐ray detector exhibits higher spatial resolution (9.8 lp mm −1 at modulation transfer function (MTF) = 0.2 and 12.5–8.9 lp mm −1 for a linear line chart), faster response time (≈200 ns), and comparable stability (>40 Gy air s −1 of X‐ray exposure) compared with the commercialized terbium‐doped gadolinium oxysulfide (GOS)‐based det

A power conversion efficiency of 10.4% is demonstrated in planar CH3 NH3 PbBr3 hybrid solar cells without hysteresis of the J-V curve, by way of controlled crystallization in the spin-coating process. The high efficiency is attributed to the formation of a dense CH3 NH3 PbBr3 thin film by the introduction of HBr solution because the HBr increases the solubility of the CH3 NH3 PbBr3 and forms a thinner CH3 NH3 PbBr3 layer with full surface coverage.

Planar CH3NH3PbI3 perovskite solar cells with constant 17.2% average power conversion efficiency irrespective of the scan rate are described. These properties are attributed to the formation of a pure CH3 NH3 PbI3 thin film by the introduction of a HI solution. Thereby, charge-injection/separation efficiency, charge-collection efficiency, diffusion coefficient, carrier lifetime, and traps are improved. As a service to our authors and readers, this journal provides supporting information supplied

We fabricated highly efficient planar type CH₃NH₃PbI_3−xCl_x (MAPbI_3−xCl_x) mixed halide perovskite solar cells <italic>via</italic> spray coating with a controlled composition of the solvents.

Sb(2)S(3)-sensitized mesoporous-TiO(2) solar cells using several conjugated polymers as hole-transporting materials (HTMs) are fabricated. We found that the cell performance was strongly correlated with the chemical interaction at the interface of Sb(2)S(3) as sensitizer and the HTMs through the thiophene moieties, which led to a higher fill factor (FF), open-circuit voltage (V(oc)), and short-circuit current density (J(sc)). With the application of PCPDTBT (poly(2,6-(4,4-bis-(2-ethylhexyl)-4H-c

Perovskite-perovskite tandem solar cells with open-circuit voltages of over 2.2 V are reported. These cost-effective, solution-processible perovskite hybrid tandem solar cells with high open-circuit voltages are fabricated by the simple lamination of a front planar MAPbBr3 perovskite cell and a back MAPbI3 planar perovskite solar cell.

A highly efficient PEN/ITO/ZnO/CH₃NH₃PbI₃ perovskite/PTAA/Au flexible planar solar cell with 1.1 V <italic>V</italic>_oc, 18.7 mA cm⁻²<italic>J</italic>_sc, 75% FF, and 15.4% <italic>η</italic> for the forward scan direction and 1.1 V <italic>V</italic>_oc, 18.7 mA cm⁻²<italic>J</italic>_sc, 76% FF and 15.6% <italic>η</italic> for the reverse scan direction under illumination of 1 Sun was demonstrated.

A high-quality Sb₂S₃ thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb₂S₃ absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very uniform thickness of Sb₂S₃ absorbers formed on a rough surface of dense blocking TiO₂/F-doped SnOv (bl-TiO₂/FTO) substrate. The planar ALD-Sb₂S₃ solar cells comprised of Au/Poly-3-hexylthiophene/ALD-Sb₂S₃/bl-TiO₂/