Se-Jeong Kim

Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantu

Two-dimensional materials such as hexagonal boron nitride (h-BN), graphene, and transition metal dichalcogenides have drawn great attention in various fields of photonics and electronics. Among them, h-BN has recently emerged as a promising material platform to study integrated quantum photonics due to its ultrabright quantum light emission capabilities. However, the fundamental optical properties of h-BN have not yet been investigated in the visible and near-infrared (NIR) spectrum thoroughly.

Abstract Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort is devoted to engineering on‐chip systems from 3D crystals such as diamond or gallium arsenide. In this study, room‐temperature coupling is demonstrated of quantum emitters embedded in layered hexagonal boron nitride to an on‐chip aluminum nitride waveguide. 1.35% light coupling efficiency is achieved in the devic

Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration and coupling of quantum emitters to photonic waveguides. Supported by simulations, we study the approach of monolithic integration, which is expected to have coupling efficiencies that are ∼4 times higher than those of a conventional hybrid stacking strategy. W

Abstract Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics and phonon polaritonics. A promising nanofabrication process used to fabricate several hBN photonic devices using a hybrid reactive ion etching (RIE) and electron beam‐induced etching (EBIE) technique is reported in detail here. The shortcomings and be

Abstract Valley polarization is among the most critical attributes of atomically thin materials. However, increasing contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a large degree of circular polarization up to 45% from a monolayer WS 2 is achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one p

The miniaturization of optical sensors is essential for the realization of compact, portable, and cost-effective devices. Photonic crystal-based optical sensors, which have an ultra-small mode volume and footprint, have demonstrated remarkable recent progress in achieving a high figure-of-merit (FOM) in a sensor. Here, we report an optical sensor with a high Q-factor and high sensitivity based on a photonic crystal nanobeam using the second lowest air band-edge mode. We calculated that a nanobea

Nanowires have garnered considerable attention in photonics and optoelectronics due to their unique features. Owing to the large surface area and significant potential of usage as a resonator and waveguide in photonic integrated circuits (PICs), nanowires have been applied in many research areas in nanophotonics. To enhance the properties of light emitting materials, the hybrid of nanowires and 2D materials has been deployed in many papers. This paper summarises recent studies on the application

We demonstrate one-dimensional nanobeam photonic bandedge lasers with InGaAsP quantum wells at room temperature from the lowest dielectric band of photonic crystal nanobeam waveguides. The incident optical power at threshold is 0.6 mW (effectively ~18 μW). To confirm the lasing from the dielectric bandedge, the polarization and the photoluminescent spectra are taken from nanobeams of varying lattice constants. The observed shift of the lasing wavelength agrees well with the computational predict

Two-dimensional (2D) materials are extensively used in almost all scientific research areas, from fundamental research to applications. Initially, 2D materials were integrated with conventional non-2D materials having well-established manufacturing methods. Recently, the concept of constructing photonic devices exclusively from 2D materials has emerged. Various devices developed to date have been demonstrated based on monolithic or hetero 2D materials. In this review, photonic devices that solel

Reconfigurable optical devices hold great promise for advancing high-density optical interconnects, photonic switching, and memory applications. While many optical modulators based on active materials have been demonstrated, it is challenging to achieve a high modulation depth with a low operation voltage in the near-infrared (NIR) range, which is a highly sought-after wavelength window for free-space communication and imaging applications. Here, electrically switchable Tamm plasmon coupled with

Integrating fluorescent nanoparticles with high-<i>Q</i>, small mode volume cavities is indispensable for nanophotonics and quantum technologies. To date, nanoparticles have largely been coupled to evanescent fields of cavity modes, which limits the strength of the interaction. Here, we developed both a cavity design and a fabrication method that enable efficient coupling between a fluorescent nanoparticle and a cavity optical mode. The design consists of a fishbone-shaped, one-dimensional photo

Monolayer transition metal dichalcogenides are promising materials that not only are atomically thin but also have direct bandgaps, making them highly regarded in optics and optoelectronics. However, their photoluminescence exhibits almost random polarization at room temperature. The emission is also omnidirectional and weak due to the low quantum yield. These limitations hamper the development of practical optoelectronic devices and solid-state single-photon sources for quantum technologies. He

Emission control of a quantum emitter made of semiconductor materials is of significance in various optical applications. Specifically, the realization of efficient quantum emitters is important because typical semiconductor quantum dots are associated with low extraction efficiency levels due to their high refractive index contrast. Here, we report bright and unidirectional emission from a site-controlled InGaN quantum dot formed on the apex of a silver-coated GaN nanopyramidal structure. We sh

Direct integration of semiconductor photonic nanocavities with paper substrates is demonstrated for the first time. 1D photonic crystal nanocavities successfully show lasing action on paper substrates. The device has great synergy as a sensor because paper has good wicking ability while a photonic crystal cavity has high figure of merit. The research provides a platform for eco-friendly and sustainable devices.