Seolhye Park

Data-driven science and technology offer transformative tools and methods to science. This review article highlights the latest development and progress in the interdisciplinary field of data-driven plasma science (DDPS), i.e., plasma science whose progress is driven strongly by data and data analyses. Plasma is considered to be the most ubiquitous form of observable matter in the universe. Data associated with plasmas can, therefore, cover extremely large spatial and temporal scales, and often

Virtual metrology (VM) model based on plasma information (PI) parameter for C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification or advanced process con

A phenomenological-based virtual metrology (VM) technique is developed for predicting the silicon nitride film thickness in multi-layer plasma-enhanced chemical vapor deposition (PECVD). Particularly, the analysis of optical emission spectroscopy based on the excitation kinetics in nitrogen plasma is used to develop novel variables, named plasma-information (PI) variables. One variable, PIWall, is determined by analyzing the light transmittances of the nitrogen emissions at the contaminated wind

In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) technology, one of the measurement and inspection (MI) technology that predicts the etch profile during the process. Recently, VM to predict the etch depth using plasma information (PI) variables and the etch process data based on the statistical regre

The generality of the non-Maxwellian electron energy distribution function (EEDF) is demonstrated by using optical emission spectroscopy (OES) and Langmuir probe measurements in inductively- and capacitively-coupled low-pressure argon plasmas to analyze the shape factor of the EEDF. To measure the shape factor of the EEDF, we propose a corona — equilibrium (CE) — based analysis model operating at low density, which uses the line intensity ratio of the Ar I to the Ar II emission lines. The Ar I l

Metal target dry etching process applied for the organic light emitting diode display manufacturing is hard to control without the generation of the defect particles. A large amount of the metal-halide by-prodcucts with the non-volatile physical nature are produced in the large area plasma-assisted process chamber. To achieve high-density plasma-based throughput, the inductively coupled plasma type dry etchers were adopted for large-area display manufacturing processes. However, this type of pla

The generality of the non-Maxwellian electron energy distribution function (EEDF) is demonstratedby using optical emission spectroscopy (OES) and Langmuir probe measurements ininductively- and capacitively-coupled low-pressure argon plasmas to analyze the shape factor ofthe EEDF. To measure the shape factor of the EEDF, we propose a corona - equilibrium (CE) -based analysis model operating at low density, which uses the line intensity ratio of the Ar I tothe Ar II emission lines. The Ar I line i

Abstract Generation of the defect particles during the plasma-assisted metal dry etching process is induced by the various mechanisms. Most of these mechanisms are caused by the non-volatility of metal-halide compounds generated during the etching process. Degeneration of the metal etching process chamber condition is observed as the frequent process fault caused by the defects, but the worse condition is not recovered by itself. Because of this property of the metal etching process, proper work

Abstract High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high‐energy ion flux and the sidewall passivation, simultaneously. To analyze the cause of HARC process failures, plasma information (PI)‐based virtual metrology (VM) algorithm was developed by using the equipment engineering system and the optical

The high-value process strategy in the organic light emitting diode display manufacturing requires strict etching profile control to obtain the normal performance of the display pixels because of the correlation between the etched structure of the processed pattern and the current–voltage characteristics of the pixels. The critical dimension, etch depth, and sidewall angle area are important management points of the etching profile. Because of two-dimensional continuous characteristics of the di

This paper introduces how to determine concentrations of ion species in a mixed gas plasma that are not linearly proportional to their neutral partial pressures. A particle balance model was developed to predict the relative ion concentrations in multiple-ion-species plasmas, considering their ionization rates and loss fluxes to the wall. Analysis is carried out especially with Ar/Xe and Ar/He multi-dipole plasmas in which the neutral gases are directly ionized by the mono-energetic primary elec