Yong Young No
Pohang University of Science and Technology · Engineering
About the Lab
Professor Yong Young No's research lab specializes in organic and printed electronics, with a strong focus on organic field-effect transistors (OFETs), optoelectronic devices, and organic non-volatile memory. The lab explores innovative materials and device engineering strategies—particularly contact engineering, solution-processable semiconductors, and nanostructured charge storage systems—to enhance device performance, stability, and processability for flexible, low-cost, and large-area electronic applications. Key research directions include improving charge transport, achieving Ohmic contacts, and developing reliable memory devices using polymer electrets and nanomaterials.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperatur
By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are s
For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been str
Organic field-effect transistors (OFETs) are promising for numerous potential applications but suffer from poor charge injection, such that their performance is severely limited. Recent efforts in lowering contact resistance have led to significantly improved field-effect mobility of OFETs, up to 100 times higher, as the results of careful choice of contact materials and/or chemical treatment of contact electrodes. Here we review the innovative developments of contact engineering and focus on th
Abstract Organic non‐volatile memory (ONVM) based on pentacene field‐effect transistors (FETs) has been fabricated using various chargeable thin polymer gate dielectrics—termed electrets—onto silicon oxide insulating layers. The overall transfer curve of organic FETs is significantly shifted in both positive and negative directions and the shifts in threshold voltage ( V Th ) can be systemically and reversibly controlled via relatively brief application of the appropriate external gate bias. The
Abstract Organic field‐effect transistor (FET) memory is an emerging technology with the potential to realize light‐weight, low‐cost, flexible charge storage media. Here, solution‐processed poly[9,9‐dioctylfluorenyl‐2,7‐diyl]‐co‐(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top‐gate/bottom‐contact device configuration is reported. A reversible shift in the threshold voltage ( V Th ) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NP
A record-breaking high electron mobility of 7.0 cm(2) V(-1) s(-1) for n-channel polymer OFETs is reported. By the incorporation of only one nitrile group as an electron-withdrawing function in the vinyl linkage of the DPP-based copolymer, a dramatic inversion of majority charge-carriers from holes to electrons is achieved.
Singlet and triplet–triplet energy transfer in phosphorescent dye doped polymer light emitting devices were investigated. Poly(N-vinylcarbazol) and poly[9,9′-di-n-hexyl-2,7-fluorene-alt- 1,4-(2,5-di-n-hexyloxy)phenylene] (PFHP) were selected as the host polymer for the phosphorescent dopants fac-tris(2-phenylpyridine) iridium(III) [Ir(ppy)3] and 2,3,7,8,12,13, 17,18-octaethyl-21H,23H-porphyrin platinum(II) (PtOEP) because of their high triplet energy levels and long phosphorescence lifetimes. In
Abstract Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light‐emitting diodes. Convenience and portability will be realized with flexible and wearable displays in
Large-area polymer FET arrays and integrated circuits (ICs) are successfully demonstrated via a simple wire-bar-coating process. Both a highly crystalline conjugated polymer layer and very smooth insulating polymer layer are formed by a consecutive wire-bar-coating process on a 4-inch plastic substrate with a short processing time for application as the active and dielectric layers of OFET arrays and ICs.
Abstract The effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge‐trapping sites on the characteristics of organic nano‐floating‐gate memory (NFGM) devices are investigated. High‐performance NFGM devices are fabricated using the n‐type polymer semiconductor, poly{[ N , N ′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)), and various metal NPs. These NPs are embedded within bilayers of various polymer
Abstract The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large‐area electronics, particularly thin‐film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High‐permittivity (κ) oxide dielectrics are a key component for achieving low‐voltage and high‐performance TFTs. With the expanding integration of complemen
Organic phototransistors (OPTs) were fabricated from pentacene and copper phthalocyanine (CuPC) based on the geometry of organic field-effect transistors (OFETs); and the effect of the wavelength of the incident light source on their performance was examined. High performance OFETs with pentacene and CuPC were fabricated and the characteristics of the OPTs were examined under UV and visible-light irradiations with top illumination. The CuPC and pentacene OPTs show a high responsivities of 0.5–2
A uniform ultrathin polymer film is deposited over a large area with molecularlevel precision by the simple wire-wound bar-coating method. The bar-coated ultrathin films not only exhibit high transparency of up to 90% in the visible wavelength range but also high charge carrier mobility with a high degree of percolation through the uniformly covered polymer nanofibrils. They are capable of realizing highly sensitive multigas sensors and represent the first successful report of ethylene detection
Research Areas
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