Korea Advanced Institute of Science and Technology · Engineering
Professor Byung Jin Cho's research lab specializes in advanced functional materials and devices for sustainable energy and wearable electronics. Key research directions include thermoelectric energy conversion using flexible and lightweight materials, electromagnetic interference shielding using 2D materials like graphene, and the development of doped semiconductor nanostructures for enhanced photocatalytic and electronic applications. The lab also focuses on innovative fabrication techniques such as screen printing and post-synthetic doping to enable scalable, high-performance devices for real-world applications.
Figures are computed from collected data and may differ slightly.
The conversion of body heat into electrical energy using a thermoelectric (TE) power generator is useful for wearable self-powered mobile electronic systems such as medical sensors or smart watches. We herein demonstrate a glass fabric-based flexible TE generator using a screen printing technique and the self-sustaining structure of a TE device without top and bottom substrates. With this technique it is possible to make the device thin (∼500 μm), lightweight (∼0.13 g cm−2), and flexible. In add
A self-powered wearable electrocardiography (ECG) system is demonstrated. The ECG sensing circuit was fabricated on a flexible PCB and powered by a wearable thermoelectric generator (w-TEG) using body heat as the energy source. To allow the TEG to obtain a large temperature difference for high power generation and also be wearable, a polymer-based flexible heat sink (PHS) comprised of a superabsorbent polymer (SAP) and a fiber that promotes liquid evaporation was devised. Parametric studies on t
We report the first experimental results on the electromagnetic interference (EMI) shielding effectiveness (SE) of monolayer graphene. The monolayer CVD graphene has an average SE value of 2.27 dB, corresponding to ~40% shielding of incident waves. CVD graphene shows more than seven times (in terms of dB) greater SE than gold film. The dominant mechanism is absorption rather than reflection, and the portion of absorption decreases with an increase in the number of graphene layers. Our modeling w
Tin (Sn)-doped beta phase gallium oxide ( β -Ga 2 O 3 ) nanostructures at different Sn concentrations (0 to 7.3 at%) are synthesized using a facile hydrothermal method. The Sn-doped β -Ga 2 O 3 nanostructures are characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and absorbance spectroscopy. In addition, their photocatalytic activity is evaluated by observing methyle
We report on a TE device composed of p-type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> and n-type Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> TE materials prepared using a screen-printing process.
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We verified the doping by electrical measurements, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses and suggest that the mechanism of n-doping is electrostatic doping by ionic physisorpti
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