Changhwan Choi

The development of bioinspired electronic devices that can mimic the biological synapses is an essential step towards the development of efficient neuromorphic systems to simulate the functions of the human brain. Among various materials that can be utilized to attain electronic synapses, the existing semiconductor industry-compatible conventional materials are more favorable due to their low cost, easy fabrication and reliable switching properties. In this work, atomic layer deposited HfO2-base

Abstract Carbon‐based electronic devices are suitable candidates for bioinspired electronics due to their low cost, eco‐friendliness, mechanical flexibility, and compatibility with complementary metal‐oxide‐semiconductor technology. New types of materials such as graphene quantum dots (GQDs) have attracted attention in the search for new applications beyond solar cells and energy harvesting due to their superior properties such as elevated photoluminescence, high chemical inertness, and excellen

Abstract Transition metal carbides, called MXenes, can be used for MXene‐based unique electronic devices such as new types of batteries, energy storage devices, and supercapacitors, where MXene is used as an electrode. The unique surface properties of MXene and 2D structure can be further applied to the new electronic devices. In this paper, the unique insulating properties of partially oxidized MXene (Ti 3 C 2 T x ) sheets are utilized for memory storage and electronic synapse applications. The

Abstract Nanocomposites based on biomaterials are promising candidates for emerging green‐ electronics benefiting from environment‐friendly, renewable, biocompatible, and biodegradable resources for sustainable research and development. Especially, the application of biocomposites‐based memristor for simulating artificial synapses called bio‐memristor has further facilitated the progress of ecologically benign bioelectronics. In this study, the authors present that the environment‐friendly nanoc

We performed various pulse measurements on an atomic layer deposited (ALD) HfO₂-based resistive switching random access memory (RRAM) device and investigated its electronic synaptic characteristics. Unlike requirements for RRAM device application, to achieve the multi-state conductance changes required for the synaptic device, we employed additional sputtered TaO_x thin film formation on the ALD HfO₂ switching medium, which leads to engineering the concentration o

We report the dependence of the thickness of amorphous boron nitride (a-BN) on the characteristics of conductive bridge random access memory (CBRAM) structured with the Ag/a-BN/Pt stacking sequence. The a-BN thin film layers of three different thicknesses of 5.5, 11, and 21.5 nm were prepared by the sputtering deposition. Depending on the thickness of the a-BN layer, the devices are found to be in either low-resistance state (LRS) or high-resistance state (HRS) prior to any consecutive switching

Abstract The comparison of resistive switching ( RS ) storage in the same device architecture is explored for atomic layer deposition ( ALD ) Al 2 O 3 , HfO 2 and HfAlO x ‐based resistive random access memory (Re RAM ) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform V SET ‐ V RES , persistent R OFF / R ON (>10 2 ) ratio and endurance up to 10 5 cycles during both DC and AC measurements were observed for HfAlO x ‐based device. This improved behavior is attributed