Sungkyunkwan University · Materials Science
Professor Cheol-Woong Yang's research lab specializes in advanced materials science with a focus on nanomaterials, surface passivation, and thin film technologies for next-generation electronic and energy devices. The lab investigates facet-dependent surface passivation in perovskite solar cells, the development of ultrathin diffusion barriers for advanced copper interconnects, and the microstructural characterization of materials using advanced electron microscopy techniques. Their work bridges fundamental surface science with practical applications in renewable energy and microelectronics.
Figures are computed from collected data and may differ slightly.
Understanding the interplay between the surface structure and the passivation materials and their effects associated with surface structure modification is of fundamental importance; however, it remains an unsolved problem in the perovskite passivation field. Here, we report a surface passivation principle for efficient perovskite solar cells via a facet-dependent passivation phenomenon. The passivation process selectively occurs on facets, which is observed with various post-treatment materials
Abstract— A new empirical cooling rate indicator for metal particles is proposed. The cooling rate indicator is based on the relationship between the size of the island phase in the cloudy zone, which abuts the outer taenite rim (clear taenite I), and the cooling rate of the host meteorite as obtained by conventional metallographic techniques. The size of the island phase was measured by high‐resolution scanning electron microscopy (SEM) in 26 meteorites and decreases from 470 nm to 17 nm, while
We observed graphene flakes on a SiO 2 /Si substrate and confirmed the variation in the thickness of the flakes by optical microscopy, Raman spectroscopy and scanning electron microscopy (SEM). We were able to clearly distinguish the thickness variation of the graphene provided a low primary electron acceleration voltage was used. It was found that different contrasts in SEM images at low acceleration voltages could be attributed to the fact that the generation of secondary electrons emitted fro
The size of the advanced Cu interconnects has been significantly reduced, reaching the current 7.0 nm node technology and below. With the relentless scaling-down of microelectronic devices, the advanced Cu interconnects thus requires an ultrathin and reliable diffusion barrier layer to prevent Cu diffusion into the surrounding dielectric. In this paper, amorphous carbon (a-C) layers of 0.75-2.5 nm thickness have been studied for use as copper diffusion barriers. The barrier performance and therm
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