Hanyang University · Materials Science
Professor Eun Kyu Kim's research lab specializes in two-dimensional (2D) materials and their applications in next-generation electronic and optoelectronic devices. The lab focuses on defect engineering, electrical property optimization, and novel device architectures—such as carristors and p-type MoS₂ transistors—using advanced fabrication techniques like chemical vapor deposition and liquid exfoliation. Key research directions include interface passivation, ion doping, and improving the stability and performance of 2D semiconductor and perovskite-based devices for practical applications.
Figures are computed from collected data and may differ slightly.
We demonstrated p-type conduction in MoS<sub>2</sub> grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS<sub>2</sub> with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A<sub>1g</sub> and E<sup>1</sup><sub>2g</sub> modes for both the pristine and P-doped samples was 19.4 cm<sup>-1</sup>. In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS<sub>2</sub
Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor struc
Molybdenum disulfide (MoS<sub>2</sub>) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS<sub>2</sub> thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS<sub>2</sub> film thickness could be controlled by centrifuge condition in the rang
The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS<sub>2</sub> FET. By applying back-gate bias, protons from an H-TFSI drople
Because the power conversion efficiency (PCE) of hybrid halide perovskite solar cells (PSCs) could exceed 24%, extensive research has been focused on improving their long-term stability for commercialization in the near future. In a previous study, we reported that the addition of a number of ionized iodide (triiodide: I<sub>3</sub><sup>-</sup>) ions during perovskite film formation significantly improved the efficiency of PSCs by reducing deep-level defects in the perovskite layer. Understandin
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