Fengwen Mu

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications, such as wireless communication and radar systems. However, the performance and reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule heating in the device channel. Integration of GaN with high thermal conductivity substrates can improve the heat extraction from

High-power GaN-based electronics are limited by high channel temperatures induced by self-heating, which degrades device performance and reliability. Increasing the thermal boundary conductance (TBC) between GaN and SiC will aid in the heat dissipation of GaN-on-SiC devices by taking advantage of the high thermal conductivity of SiC substrates. For the typical growth method, there are issues concerning the transition layer at the interface and low-quality GaN adjacent to the interface, which imp

The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga₂O₃ promising for applications of next-generation power electronics, while its thermal conductivity is at least 1 order of magnitude lower than other wide/ultrawide band gap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, proper thermal management strategies are essential, especially for high-power high-f

DNA detection with high sensitivity and specificity has tremendous potential as molecular diagnostic agents. Graphene and graphene-based nanomaterials, such as graphene nanopore, graphene nanoribbon, graphene oxide, and reduced graphene oxide, graphene-nanoparticle composites, were demonstrated to have unique properties, which have attracted increasing interest towards the application of DNA detection with improved performance. This article comprehensively reviews the most recent trends in DNA d

4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding between the SiC wafers with tensile strength greater than 32 MPa was demonstrated at room temperature under 5 kN force for 300 s. Almost the entire wafer has been bonded very well except a small peripheral region and few voids. The interface structure was analyzed to verify the bonding mechanism. It was found an amorphou

Abstract In this study, the results of direct wafer bonding of SiC–SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (RTA) at 1273 K in Ar gas. Compared with that obtained by the standard SAB, the bonding interface obtained by the modified SAB with a Si-containing Ar ion beam is ∼30% stronger and almost comp

Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques that can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency time-domain thermoreflectance (TDTR) mapping technique (1.61

Although the monolithic integration of silicon carbide (SiC) Micro-Electro-Mechanical Systems (MEMS) and SiC electronics is very promising, it is still very challenging due to the absence of suitable bulk machining technology of SiC. In this research, wafer bonding was proposed to assist the monolithic integration of SiC MEMS and SiC electronics by the formation of a suspended epitaxial SiC membrane. However, currently, SiC-SiC wafer bonding is still very difficult, especially for its direct waf

Abstract A modified surface activated bonding (SAB) with Fe–Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects device performance, cannot be avoided during some annealing processes. In this work, the room-temperature wafer bonding of SiC–Si by only one sputtered Si nanolayer was successfully achieved. The bonding interface was investigated. A uniform intermediate layer with a thickness of ∼15 nm just containing Si, C, an

Abstract This paper presents a room temperature bonding technique of glass substrates with a transparent bonding interface. As a room temperature bonding method, surface activated bonding (SAB) is applied for the bonding of glass using Si intermediate layer. However, the bonding interface is colored by the deposited Si layers, which leads to lower applicability to optical devices. In this study, a new concept of SAB is developed using aluminum oxide intermediate layer. Glass substrates are succe