Sungkyunkwan University · Engineering
Professor Geun Young Yeom's research lab specializes in advanced nanomaterials and atomic-scale processing techniques for next-generation semiconductor and energy devices. The lab focuses on atomic layer etching (ALE), transition metal dichalcogenides (e.g., MoS₂), and 2D materials such as graphene, with applications in high-performance electronics and renewable energy. Key research directions include precise thickness control of 2D materials, plasma-based doping and surface engineering, and the development of novel electrode materials for dye-sensitized solar cells. The lab emphasizes low-damage, high-precision fabrication processes for sub-10 nm device integration.
Figures are computed from collected data and may differ slightly.
Dye-sensitized solar cell using counter electrode based on transition metal dichalcogenides.
The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical desorption, can be the most powerful technique due to barely no damage and no contamination. In this study, we demonstrated the ALE process of graphene layers without noticeably damaging the graphene by using a controlled low energy oxygen (O<sub>2<
In this study, a simple and controllable chlorine doping method of MoS<sub>2</sub> using a remote inductively coupled plasma (ICP) was studied and the effect of doping on the properties of MoS<sub>2</sub> was investigated by adjusting the work function of MoS<sub>2</sub>.
Abstract Atomic layer etching (ALE) has advantages such as precise thickness control, high etch selectivity, and no‐increase in surface roughness which can be applied to sub 10 nm semiconductor device fabrication. In this study, anisotropic ALE of tungsten (W), which is used as an interconnect layer and gate material of semiconductor devices, was investigated by sequentially exposing to F radicals by NF 3 plasma to form a WF y layer and following exposure to an oxygen ion beam to remove the WF y
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