Sungkyunkwan University · Engineering
한기김 교수의 연구실은 유기 에너지 소자 및 투명 전도성 산화물에 초점을 맞춘 고성능 전자재료 연구를 수행하고 있습니다. 주로 ITO, ZnO:Al, IZO 등의 투명 도체막을 활용한 유연성과 내구성을 확보한 소자 기반 연구를 진행하며, 플라즈마 손상이 없는 저저항 접합 및 고효율 소자 구현에 기여하고 있습니다. 특히 유연한 페로브스카이트 태양전지, 톱이매itting OLED, 투명 히터 등 응용 분야로의 기술 이식에 주력하고 있습니다.
Figures are computed from collected data and may differ slightly.
We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2×10−5mA∕cm2) at reverse bias of −6V as compared to that (1×10−1–10−2mA∕cm2 at −6V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution el
We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd=2×1017 cm−3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current–voltage characteristics, showing that high-quality ohmic contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2×10−4 Ω cm2 when annealed at 300 °C for 1 min in a N2 atmosphere.
We have investigated nonalloyed Al/Pt ohmic contacts on n-type ZnO:Al (nd=2.0×1018 cm−3). It is shown that the as-deposited Al/Pt contacts produce a specific contact resistivity of 1.2×10−5 Ω cm2. Auger electron spectroscopy and x-ray photoelectron spectroscopy depth profile results show interdiffusion between oxygen and aluminum, resulting in an increase of carrier concentrations near the ZnO surface. The increase of the carrier concentration at the surface region of ZnO is attributed to the lo
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