Pohang University of Science and Technology · Engineering
Professor Huihui Zhu's research lab specializes in the development of solution-processed semiconductor materials, with a primary focus on metal halide perovskites and metal oxide semiconductors for next-generation optoelectronic and electronic devices. The lab pioneers low-temperature, printable thin-film transistor (TFT) technologies, emphasizing lead-free, stable, and high-performance p-type and ambipolar perovskite-based TFTs for flexible and wearable electronics. Key research directions include defect passivation, grain boundary engineering, halide anion doping, and solvent engineering to enhance mobility, reduce hysteresis, and improve device reliability.
Figures are computed from collected data and may differ slightly.
Abstract Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light‐emitting diodes. Convenience and portability will be realized with flexible and wearable displays in
Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) b
Perovskites have been intensively investigated for their use in solar cells and light-emitting diodes. However, research on their applications in thin-film transistors (TFTs) has drawn less attention despite their high intrinsic charge carrier mobility. In this study, the universal approaches for high-performance and reliable p-channel lead-free phenethylammonium tin iodide TFTs are reported. These include self-passivation for grain boundary by excess phenethylammonium iodide, grain crystallizat
Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI<sub>3</sub>) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improveme
Abstract Tin halide perovskites have the general chemical formula ASnX 3 , where A is a monovalent cation and X is a monovalent halide anion. These semiconducting materials can be used to fabricate p-type transistors at low cost and temperature and could be potentially integrated with n-type oxide-based transistors to create complementary circuits. However, the materials suffer from low crystallization controllability and high film defect density, resulting in uncompetitive device performance. H
Perovskite materials have displayed remarkable performance when used in photovoltaic devices. In comparison, research on their application in thin-film transistors (TFTs) has been developing slowly. We report reliable high-performance p-channel lead-free layered perovskite phenethylammonium tin iodide TFTs using simple and easily repeatable one-step spin-coating with premixed binary solvents of N,N-dimethylformamide (DMF) and chlorobenzene (CB)/ethyl acetate (EA). CB/EA antisolvent addition faci
Metal-halide perovskites, exhibiting exceptional optoelectronic properties, have emerged as a highly promising class of semiconductors for diverse applications. However, the inherent instability caused by ion migration has raised significant concerns, impeding further commercialization. This notorious phenomenon has been widely reported in lead (Pb2+)-halide perovskite devices, resulting in instability issues such as hysteresis, phase segregation, localized doping, and electrochemical reactions.
One-dimensional metal-oxide nanofibers show great promise as the basis for nano-device platforms due to their large surface to volume ratio and unique electrical properties. Here, we represent the facile fabrication of p-type CuO nanofibers utilizing the electrospinning technique for field-effect transistors (FETs), which incorporate CuO nanofibers as a channel and high-κ Al2O3 as a dielectric layer. The FETs exhibit typical p-type characteristics with a high hole mobility of 3.5 cm2/Vs at a low
Abstract 2D tin‐based perovskites have gained considerable attention for use in diverse optoelectronic applications, such as solar cells, lasers, and thin‐film transistors (TFTs), owing to their good stability and optoelectronic properties. However, their intrinsic charge‐transport properties are limited, and the insulating bulky organic ligands hinder the achievement of high‐mobility electronics. Blending 3D counterparts into 2D perovskites to form 2D/3D hybrid structures is a synergistic appro
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