Sungkyunkwan University · Materials Science
Professor Jaehoon Lim's research lab specializes in the development of high-performance, solution-processed quantum dot-based optoelectronic devices, with a primary focus on quantum dot light-emitting diodes (QLEDs) for next-generation displays and solid-state lighting. The lab pioneers advanced materials design—particularly core/shell heterostructured InP and CdSe-based quantum dots—with precise control over composition gradients, shell engineering, and surface passivation to achieve high photoluminescence quantum yield, exceptional stability, and efficient charge injection. Key research directions include enhancing device efficiency and brightness under high current density, mitigating non-radiative Auger recombination, and developing robust, environmentally benign QLED architectures using non-toxic materials and scalable printing techniques. The lab also explores innovative device architectures, such as top-emission and Si-substrate integrated QLEDs, to expand practical applications beyond conventional limits.
Figures are computed from collected data and may differ slightly.
We demonstrate bright, efficient, and environmentally benign InP quantum dot (QD)-based light-emitting diodes (QLEDs) through the direct charge carrier injection into QDs and the efficient radiative exciton recombination within QDs. The direct exciton formation within QDs is facilitated by an adoption of a solution-processed, thin conjugated polyelectrolyte layer, which reduces the electron injection barrier between cathode and QDs via vacuum level shift and promotes the charge carrier balance w
CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.
Utilizing the reactivity difference between TOPSe and TOPS, we synthesized InP@ZnSeS QDs with the composition gradient in a radial direction where ZnSe alleviated lattice strain and ZnS protected QDs from degradation so that we achieved QDs with high QE and photo/chemical stability. In terms of systematic investigation on the relationship between the shell nanostructure and QD stability, we demonstrated that QDs with thick gradient shells exhibited high QE and much enhanced stability against the
Quantum dot light-emitting diodes (QLEDs) are one of the most promising candidates for next-generation displays and lighting sources, but they are barely used because vulnerability to electrical and thermal stresses precludes high brightness, efficiency, and stability at high current density (J) regimes. Here, bright and stable QLEDs on a Si substrate are demonstrated, expanding their potential application boundary over the present art. First, a tailored interface is granted to the quantum dots,
Colloidal semiconductor quantum dots (QDs) are a highly promising materials platform for implementing solution-processable light-emitting diodes (LEDs). They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suited for large-area applications such as television screens, solid-state lighting, and outdoor signage. Additional beneficial features include size-controlled emission wavelengths, narrow bandwidths, an
Quantum dot-based light emitting diodes have extensively been investigated over the past two decades in order to utilize high color purity and photophysical stability of quantum dots. In this review, progresses on the preparation of quantum dots, structural design of electroluminescence devices using quantum dots, and printing processes for full-color quantum dot display will be discussed. The obstacles originating from the use of heavy metals, large hole injection barrier, and imperfect printin
We report scalable controlled synthesis of CdSe tetrapods with high morphological uniformity based on the continuous precursor injection (CPI) approach with halide ligands. The CPI approach involves the successive injection of precursors into the seed solution at a controlled rate so that the reaction condition remains in the kinetic growth regime. To initiate the successful development of tetrapod structure, the controlled amount of halide ligands are added during the reaction, which triggered
Colloidal semiconductor nanocrystals hold great promise in display technologies, as the tunable energy levels and narrow emission bandwidth allow for wide gamut in color space. Impetus for energy-efficient, high-color-quality display has driven the surge of interest in electrically driven quantum dot-based light-emitting diodes (QD-LEDs). While extensive efforts have led to synthesis of QDs with near-unity photoluminescence quantum yield and fabrication of QD-LEDs with external quantum efficienc
Successful exploitation of semiconductor nanocrystals (NCs) in commercial products is due to the remarkable progress in the wet-chemical synthesis and controlled assembly of NCs. Central to the cadence of this progress is the ability to understand how NC growth and assembly can be controlled kinetically and thermodynamically. The arrested precipitation strategy offers a wide opportunity for materials selection, size uniformity, and morphology control. In this colloidal approach, capping ligands
The past decade has witnessed remarkable progress in the device efficiency of quantum dot light-emitting diodes based on the framework of organic-inorganic hybrid device structure. The striking improvement notwithstanding, the following conundrum remains underexplored: state-of-the-art devices with seemingly unfavorable energy landscape exhibit barrierless hole injection initiated even at sub-band gap voltages. Here, we unravel that the cause of barrierless hole injection stems from the Fermi le
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