Korea University · Engineering
Professor Kwang-Ho Kwon's research lab specializes in plasma materials processing and advanced thin film semiconductor technologies, with a focus on developing high-performance oxide semiconductors and optimizing plasma etching processes for next-generation optoelectronic and display devices. The lab investigates atomic layer deposition of ultra-thin, crystalline transparent oxide semiconductors such as In₂O₃ and Al:InZnSnO for transparent thin-film transistors and phototransistors, while also exploring reactive ion etching mechanisms for silicon-based and noble metal materials using various fluorocarbon and halogen-based gas mixtures. A key strength lies in the integration of in situ plasma diagnostics, surface characterization (e.g., XPS), and modeling to understand and control plasma chemistry and surface reactions at the atomic level.
Figures are computed from collected data and may differ slightly.
Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for transparent thin film transistors. However, the nature of the process used to fabricate these films causes most binary metal oxide thin films to be highly conductive, making them unsuitable for channel materials. We overcame this hurdle by forming stoichiometric ultra-thin (5 nm) crystalline In2O3 films by using a thermal atomic layer deposition method. Specifically, (3-(dimethylamino)propyl)dimethylind
This work discusses the effect of gas mixing ratio on the HBr/X (, He, or ) plasma parameters, steady-state densities, and fluxes of active species in the planar inductively coupled plasma reactor. The investigation combined plasma diagnostics by Langmuir probes and a global (zero-dimensional) plasma model with Maxwellian approximation for the electron energy distribution function. The dilution of HBr by Ar results in a maximum effect on the HBr electron impact dissociation kinetics and provides
This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO<sub>2</sub>, and Si<sub>x</sub>N<sub>y</sub>) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (CF<sub>4</sub>, C<sub>4</sub>F<sub>8</sub>, CHF<sub>3</sub>) with Ar and O<sub>2</sub> or by tw
In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V·s and an excellent high photoresponsivity of 25 000 A/W, a photosensitivity of 3.3 × 107, a specific detectivity of 4.3 × 1017 cm·Hz1/2·W−1 under the illumination at 460 nm with an intensity of 140 μW/cm2. The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gat
The inductively coupled plasma etching of platinum with Ar/Cl2 gas chemistries is described. X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical binding states of the etched surface with various Ar/(Ar+Cl2) mixing ratios. Atomic percentage of Cl element increases with increasing Ar/(Ar+Cl2) mixing ratio with the exception of Ar/(Ar+Cl2) mixing ratio of 1. At the same time, the peaks that seem to be subchlorinated Pt at XPS narrow scan spectra are found and Cl–Pt bonds rapi
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