Mohd Syamsul

We fabricated and characterized black polycrystalline diamond field effect transistors. By implementing a C-H bonded channel with a wide gate-drain length up to 20 μm, a breakdown voltage of 1.8 kV was achieved, which is the highest value reported for a diamond field effect transistor (FET) to date. Several of our devices achieved a breakdown voltage/wide gate-drain length ratio > 100 V/μm. This is comparable to the performance of lateral SiC and GaN FETs. We investigated the effects of v

The exceptional performance of diamondbased field-effect transistor technology is not restricted to devices that use single crystallinediamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> ) configuration using C-H bonded channels, and a high maximum current densi

A transparent polycrystalline diamond field-effect transistor (FET) was fabricated and measured in room temperature measurements, which reveals comparatively high maximum current density and high breakdown voltage of more than 1000 V. A harsh stress environment is proposed for simple and time-effective reliability stress measurement of the FET using a method of 50 continuous cycles of 500-V voltage stress. A 400-nm-thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://

Carbon nanotubes are tiny hollow cylinders, made from a single grapheme sheet, that possess many amazing properties. Spurred by the Human Genome Project, deoxyribonucleic acid (DNA), carbon nanotube based biosensors are indispensable tools in molecular biology.

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in mono

International Conference on Semiconductor Materials and Technology (ICoSeMT 2019, 29-30 April 2019, Penang, Malaysia) was an inaugural event organized by the Institute of Nano Optoelectronics Research and Technology (INOR) and Universiti Sains Malaysia (USM) in conjunction with the 50th Anniversary of USM. This volume presents for readers the collection of papers that were represented on this event and reflects the modern trends in the area of materials science and technologies for opto- and mic

ABSTRACT Halochromic polymers offer innovative pH‐sensing capabilities essential for smart applications in environmental monitoring and biomedical diagnostics. In this study, we enhance the compatibility of poly(lactic acid) (PLA) and poly(butylene adipate terephthalate) (PBAT) blends for fused deposition modeling (FDM) by incorporating 3‐Glycidoxypropyltrimethoxysilane (GPTMS) as a reactive compatibilizer and methyl orange (MO) dye as a halochromic agent. Halochromic polymer filaments were prep

Face recognition is one of the most sophisticated disciplines of biometric systems. The use of VCSEL in automotive applications is one of the most recent advances. The existing VCSEL package with a diffuser on top of a lens intended for automotive applications could not satisfy the criteria of the automotive TS16949: 2009 specification because the package was harmed and developed a lens fracture during 100 thermal cycle tests. In order to complete a cycle, the temperature rises from -40 °C to 15

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