Yonsei University · Engineering
Professor Moo Whan Shin's research lab specializes in advanced materials for energy conversion and storage, with a strong focus on thermal management in high-power electronics and next-generation battery technologies. Key research directions include thermal characterization and optimization of LED packaging systems, development of protective coatings for high-nickel layered oxide cathodes in lithium-ion batteries, and innovative interface engineering for resistive random-access memory (RRAM) and lithium-air batteries. The lab employs advanced experimental and simulation techniques such as transient thermal analysis, finite volume method modeling, and chemical synthesis to address reliability and performance challenges in energy materials.
Figures are computed from collected data and may differ slightly.
The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications.
In this paper we present thermal analysis of three kinds of ceramic package designs for high power LEDs and thermal characterization of high power LED array system. The analysis was made by transient thermal measurement and thermal simulation using the finite volume method (FVM). For the package design, thermal behaviors, as are described in thermal resistance, of the three packaging designs were compared and evaluated as functions of bulk thermal resistance, spreading resistance, and surface ro
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