Seoul National University · Materials Science
Professor Nong-Moon Hwang's research lab specializes in the development and characterization of advanced ceramic and oxide-based thin films and coatings for high-performance electronic and semiconductor applications. The lab focuses on understanding and controlling the growth mechanisms of nanostructures and thin films via chemical vapor deposition (CVD) and plasma spraying techniques, with particular emphasis on phase equilibria, charged nanoclusters, and plasma-resistant materials. Key research directions include the synthesis of novel oxides such as yttrium oxyfluoride (YOF) coatings for use in dry etching chambers of 3D semiconductor devices, and the fundamental study of growth dynamics involving gas-phase nuclei and phase transitions in complex oxide systems.
Figures are computed from collected data and may differ slightly.
The phase equilibria of the systems SrO‐CuO and SrO‐1/2Bi 2 O 3 were studied by X‐ray diffraction analysis of quenched powder samples. The compounds SrCuO 2 and Sr 2 CuO 3 melt incongruently at 1085° and 1225°C, respectively. The newly found compound Sr 6 Bi 2 O 9 decomposes at 965°C into SrO and Sr 3 Bi 2 O 6 melts incongruently into SrO and liquid at 1210°C. SrBi 2 O 4 undergoes a phase transition at ∼825°C, and although both are nonstoichiometric, the low‐temperature phase is slightly poorer
AbstractA cauliflower structure is a granular film composed of spherical particles similar in size, each with numerous nanoscale nodules on its surface. The structure is produced during certain chemical vapour deposition (CVD) processes for diamond and silicon thin film growth. A classical account in terms of atomic unit deposition fails to explain the growth of such a cauliflower structure, as it requires a gas phase of much higher supersaturation than for onset of diffusion controlled growth.
The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it wil
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