Hokkaido University · Engineering
Professor Osamu Fujita's research lab specializes in quantum materials and advanced semiconductor devices, focusing on spin-based phenomena in low-dimensional systems and novel memory technologies for next-generation computing. The lab investigates quantum spin systems such as spin-Peierls compounds using neutron scattering to probe magnetic excitation gaps and field-induced quantum transitions. In parallel, the lab develops innovative floating-gate MOSFET devices with dual floating gates for high-resolution analog memory, enabling applications in neuromorphic computing and low-power LSIs. The integration of fundamental quantum physics with practical nanoelectronic device design defines the lab's interdisciplinary approach.
Figures are computed from collected data and may differ slightly.
The magnetic field dependence of the spin-Peierls gap in CuGe${\mathrm{O}}_{3}$ has been studied by means of neutron inelastic scattering. The splitting of the single gap state into three distinct excitation branches under a magnetic field can be regarded as direct evidence for the singlet-triplet transition in a spin-Peierls system.
A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-
Open papers in the app to read, cite, and organize with AI.
