The University of Tokyo · Materials Science
Professor Ryo Ishikawa's research lab specializes in advanced electron microscopy techniques to investigate atomic-scale defects and dopants in functional materials. The lab focuses on developing and applying quantitative electron microscopy methods—such as aberration-corrected STEM, differential phase-contrast imaging, and electron energy-loss spectroscopy—to directly observe and characterize single-atom dopants, vacancies, and their bonding states in semiconductors like wurtzite AlN. A key research direction involves 3D atomic localization and dynamic diffusion processes using low-dose, high-resolution imaging, enabling precise correlation between atomic structure and material properties. The lab also explores the impact of material microstructure on device performance, particularly in optical and electronic applications.
Figures are computed from collected data and may differ slightly.
Diffusion is one of the fundamental processes that govern the structure, processing, and properties of materials and it plays a crucial role in determining device lifetimes. However, direct observations of diffusion processes have been elusive and limited only to the surfaces of materials. Here we use an aberration-corrected electron microscope to locally excite and directly image the diffusion of single Ce and Mn dopants inside bulk wurtzite-type AlN single crystals, identifying correlated vaca
Material properties are sensitive to atomistic structure defects such as vacancies or impurities, and it is therefore important to determine not only the local atomic configuration but also their chemical bonding state. Annular dark-field scanning transmission electron microscopy (STEM) combined with electron energy-loss spectroscopy has been utilized to investigate the local electronic structures of such defects down to the level of single atoms. However, it is still challenging to two-dimensio
Materials properties, such as optical and electronic response, can be greatly enhanced by isolated single dopants. Determining the full three-dimensional single-dopant defect structure and spatial distribution is therefore critical to understanding and adequately tuning functional properties. Combining quantitative Z-contrast scanning transmission electron microscopy images with image simulations, we show the direct determination of the atomic-scale depth location of an optically active, single
One of the difficulties in analyzing atomic resolution electron microscope images is that the sample thickness is usually unknown or has to be fitted from parameters that are not precisely known. An accurate measure of thickness, ideally on a column-by-column basis, parameter free, and with single atom accuracy, would be of great value for many applications, such as matching to simulations. Here we propose such a quantification method for annular dark field scanning transmission electron microsc
We investigate the hydrostatic pressure dependence of the Bragg wavelength of a fiber Bragg grating (FBG) inscribed in a perfluorinated graded-index (PFGI-) polymer optical fiber (POF) at 1550 nm. At 0.5 MPa, the Bragg wavelength increased with time and became almost constant ~150 min later. Such a long time constant probably originates from the unique structure of the PFGI-POF, which has a thick overcladding around its core and cladding. The pressure-dependence coefficient without considering t
The continuing development of aberration correctors for the scanning transmission electron microscope (STEM) offers the possibility of locating single atoms in crystals in 3D via optical depth sectioning. The main factors that determine the feasibility of such an approach are visibility and dose requirements. Here, we show how Poisson's statistics can be quantitatively incorporated into STEM image simulations and demonstrate that the 3D location of single cerium atoms in wurtzite-type aluminum n
The temporal resolution in scanning transmission electron microscopy (STEM) is limited by the scanning system of an electron probe, leading to only a few frames per second (fps) at most in the current microscopes. To push the boundary of atomic-resolution STEM imaging into dynamic observations, an unprecedentedly faster scanning system combined with fast electron detection systems should be a prerequisite. Here we develop a new scanning probe system with the acquisition time of 83 nanoseconds pe
Cubic boron nitride is a promising system for photonics and optoelectronics. Determining the inclusion mechanisms for dopants with a large size mismatch, such as luminous rare-earth elements, is prerequisite to understanding their functional properties and to effective doping control. Combining evidence from subangstrom resolution scanning transmission electron microscopy, imaging simulations, and first-principles calculations, we show that cationic Ce(3+) single dopants are not located at catio
Rare-earth doped wurtzite-type aluminum nitride (w-AlN) has great potential for high-efficiency electroluminescent applications over a wide wavelength range. However, because of their large atomic size, it has been difficult to stably dope individual rare-earth atoms into the w-AlN host lattice. Here we use a reactive flux method under high pressure and high temperature to obtain cerium (Ce) doped w-AlN single crystals with pink-colored luminescence. In order to elucidate the atomic structure of
Single dopants in materials have strong influences on the fundamental properties in extensive fields. Annular dark-field scanning tranmission electron microscopy (ADF STEM) has been contributed to directly investigate the occupation site of single dopants and their spatial distributions at atomic scale. However, the resultant atomic resolution images are projected in two dimensions, lacking in depth information. Here, we demonstrate the direct determination of three-dimensional atomic locations
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