Korea University · Engineering
Professor Sangsig Kim's research lab specializes in advanced semiconductor materials and novel memory device technologies, with a focus on wide-bandgap semiconductors like GaN and oxide-based resistive switching memories. The lab investigates the fundamental electronic and optical properties of epitaxial III-nitride semiconductors under extreme conditions, such as high hydrostatic pressure, to understand carrier dynamics and defect-related emissions. It also develops flexible and silicon-compatible quasi-nonvolatile memory devices with high performance, endurance, and scalability for next-generation computing systems. The lab's work bridges materials science, device physics, and integrated circuit applications, aiming to overcome bottlenecks in memory hierarchy and energy efficiency.
Figures are computed from collected data and may differ slightly.
The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the ‘‘yellow’’ band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at
Resistance switching memory devices constructed on flexible plastic substrates via the spin-coating of titanium oxide solution were characterized in this study. The resistance switching memory device exhibited a ratio of the high resistance to low resistance states of more than 102, and this large resistance ratio was maintained even after 104 s. These memory characteristics are comparable to those of resistance switching memory devices based on titanium oxide films deposited on Si substrates. M
Abstract Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative memory technologies are thus necessary for quasi‐nonvolatile memory applications. Herein, a fully complementary metal‐oxide‐semiconductor‐compatible quasi‐nonvolatile memory composed of p + ‐n‐p‐n + silicon on a silicon‐on‐insulator substrate is presented. The quasi‐nonvolatile silicon memory device demonstrates high‐speed write capability ( ≤ 100 ns), long rete
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