Yonsei University · Engineering
Professor Sangwoo Lim's research lab specializes in advanced functional materials and thin film technologies for next-generation electronic and optoelectronic applications. The lab focuses on developing low-dielectric-constant materials—particularly fluorine-doped silicon dioxide films—through plasma-enhanced chemical vapor deposition for use in ultralarge-scale integrated (ULSI) circuits, aiming to reduce signal delay and improve device performance. Another key research direction involves the synthesis and magnetic characterization of diluted magnetic semiconductors, such as Zn1-xMnO, achieving room-temperature ferromagnetism via hole-mediated mechanisms. The lab combines advanced characterization techniques, including SQUID, AGM, ellipsometry, and spectroscopic analysis, to understand polarization mechanisms and growth kinetics at the nanoscale.
Figures are computed from collected data and may differ slightly.
We report on the room-temperature hole-mediated ferromagnetism in Zn1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temper
The delay due to the dielectric constant of an interlayer film results in the limited performance of very large-scale integrated circuits (VLSI). One solution to this problem is the use of a low-dielectric-constant interlayer film such as F-doped SiO 2 . We were able to obtain F-doped SiO 2 films with dielectric constants as low as 2.3 and good step coverage by adding CF 4 to SiH 4 /N 2 O plasma-enhanced chemical vapor deposition (PECVD). Our study focuses on the mechanism of the decrease in the
One solution to signal delay in very large‐scale integrated circuits is to use a low dielectric constant interlayer film, such as F‐doped silicon dioxide . By adding to plasma‐enhanced chemical vapor deposition, we obtained F‐doped films with a dielectric constant as low as 2.6. We studied the mechanism behind this decrease in the dielectric constant by estimating the constants due to each polarization component (ionic, electronic, and orientational) using capacitance‐voltage (C‐V) measurements,
Use of F‐doped silicon dioxide film as a low dielectric constant intermetal film for ultralarge scale integrated circuits (ULSI) is useful from the viewpoint of product cost and compatibility with present processing technologies. By adding to plasma‐enhanced chemical vapor deposition, we obtained F‐doped films with a dielectric constant as low as 2.6. The mechanism behind this decrease was investigated by estimating the dielectric constants due to the polarization components using capacitance‐vo
Open papers in the app to read, cite, and organize with AI.
