Yonsei University · Engineering
Professor Seung-min Chung's research lab specializes in the development of two-dimensional (2D) transition metal dichalcogenides (TMDs) for advanced electronic and sensing applications. The lab focuses on enhancing the performance of 2D TMD-based devices through innovative strategies such as defect-selective functionalization, atomic layer deposition of catalytic nanoparticles, and the integration of van der Waals heterojunction contacts. Key research directions include ultrasensitive, low-power gas sensors operating at room temperature, and high-performance field-effect transistors with minimized contact resistance. The lab combines materials synthesis, nanofabrication, and advanced characterization to address fundamental challenges such as Fermi-level pinning and Schottky barrier formation.
Figures are computed from collected data and may differ slightly.
Two‐dimensional (2D) transition metal dichalcogenides (TMDs) have garnered significant attention in gas‐sensing applications due to their sensitive response to a wide range of gas molecules and their ability to operate at low temperatures, resulting in low‐power consumption. However, there are several areas that require improvement, including insufficient sensitivity at low detection limits, limited gas selectivity, low reliability, and poor recovery. To address these issues and enhance the perf
We introduce a new approach for the fabrication of an ultrasensitive nitrogen dioxide (NO2) gas sensor operating at room temperature. By using atomic layer deposition (ALD), Pt nanoparticles (NPs) can be selectively decorated on surface defects of tungsten disulfide (WS2). Our study demonstrated that defect-selectively functionalized gas sensors with Pt NPs only at high-surface-energy sites, such as dangling bonds and grain boundaries, exhibit a greater enhancement in sensitivity than nonselecti
Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered promising alternatives to Si as channel materials because of the possibility of retaining their superior electronic transport properties even at atomic body thicknesses. However, the realization of high-performance 2D TMDC field-effect transistors remains a challenge owing to Fermi-level pinning (FLP) caused by gap states and the inherent high Schottky barrier height (SBH) within the metal contact and channel layer. This
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