Kyung Hee University · Engineering
Professor Sung Hun Jin's research lab specializes in the development of physically transient and environmentally responsive electronic systems, with a focus on sustainable, biodegradable, and low-power devices. Key research directions include water-soluble thin-film transistors based on amorphous IGZO and molybdenum disulfide, carbon nanotube and 2D semiconductor-based flexible electronics, and lead-free perovskite materials for stable optoelectronic applications. The lab also pioneers novel resistive memory devices using p-type semiconductors like copper iodide, emphasizing integration with n-type oxide semiconductors for complementary logic and multi-level data storage. Their work emphasizes device reliability, environmental stability, and the fundamental understanding of defect dynamics in emerging semiconductors.
Figures are computed from collected data and may differ slightly.
This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec
Abstract The origins of gate‐induced hysteresis in carbon nanotube field‐effect transistors are explained and techniques to eliminate this hysteresis with encapsulating layers of methylsiloxane and modified processes for nanotube growth are reported. A combined experimental and theoretical analysis of the dependence of hysteresis on the gate voltage sweep‐rate reveals the locations, types, and densities of defects that contribute to hysteresis. Devices with designs that eliminate these defects e
This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, a
We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (ΔV(HYS) ∼ 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability with time (∼50 days) of MoS2 FETs with (or without) CYTOP encapsulation. The extracted lifetime of the device with CYTOP passivation in air was dramatically improved from 7 to 377 days, and even for the short-term bias stability, the experimental thre
With the surge in perovskite research, practical features for future applications are desired to be secured, but the reliability of the materials and the use of hazardous Pb are longstanding problems. Here, an air-stable Cs<sub>2</sub> SnI<sub>6</sub> (CSI) is prepared via diluted hydriodic acid solvent-based precursor optimization during scalable hydrothermal growth. Materials characterization is performed using various elemental peak analyses and crystallographic identification. The resulting
Abstract This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI) semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which can be readily integrated with metal‐oxide n‐type counterparts for complementary circuit systems. Herein, CuI RRAM devices are implemented via a room‐temperature solid iodination process, exhibiting a consistent On/Off ratio (≈10 4 ), excellent endurance of more than ≈10 3 cycles, together with a long retention period (>
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