[论文解读] Characterisation, simulation and test beam data analysis of stitched passive CMOS strip sensors

I. Zatočilová, J.-H. Arling+21 more|arXiv (Cornell University)|Sep 28, 2023

Particle Detector Development and Performance被引用 1

一句话总结

本论文展示了在150 nm CMOS工艺中通过拼接多个光罩（reticules）制造大面积无源CMOS条纹传感器的设计、仿真及测试束流验证，后端加工由柏林IZM完成。结果表明，辐照后传感器表现出抗辐射能力并保持完整功能，证实了拼接传感器在LHC Phase-II探测器升级中的可行性。

ABSTRACT

In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.

研究动机与目标

• 开发适用于ATLAS和CMS实验LHC Phase-II探测器升级的大面积无源CMOS条纹传感器。
• 通过在制造过程中拼接多个光罩，克服标准CMOS工艺条纹长度的限制。
• 通过仿真与实验测试，评估拼接传感器的抗辐射能力与探测器性能。
• 在真实束流条件下，验证传感器在辐照前后的功能与性能表现。
• 为无源CMOS条纹传感器项目未来提交更优传感器设计奠定基础。

提出的方法

• 在波恩大学采用150 nm CMOS工艺设计无源CMOS条纹传感器。
• 在IZM柏林进行后端加工，以实现电荷收集功能。
• 在代工厂将最多五个独立光罩拼接，以实现所需的条纹长度。
• 在探针台上利用Sr90源和基于激光的TCT系统（边缘TCT与顶面TCT）对传感器进行表征。
• 使用Sentaurus TCAD对传感器响应进行仿真，以预测性能并优化设计。
• 将多个拼接传感器组装成探测器模块，并在DESY的两次束流实验中进行测试。

实验结果

研究问题

• RQ1 能否在标准CMOS工艺中通过拼接多个光罩可靠地制造大面积无源CMOS条纹传感器？
• RQ2 拼接传感器的性能与仿真结果及标准传感器的预期表现相比如何？
• RQ3 辐照后，拼接无源CMOS条纹传感器的抗辐射能力如何？
• RQ4 未辐照与辐照后的传感器，其实验室测量结果与束流实验数据的相关性如何？
• RQ5 拼接传感器在辐照后是否能保持足够的电荷收集效率与信号响应，以满足LHC Phase-II应用需求？

主要发现

• 拼接的无源CMOS条纹传感器在实验室与束流测试中均实现了完整功能与足够的性能表现。
• 使用Sentaurus TCAD的仿真结果准确预测了传感器响应，并有效指导了设计优化。
• 利用Sr90源与TCT系统的实验室测量结果表明，拼接传感器在电荷收集与信号响应方面表现一致。
• DESY的束流实验数据表明，未辐照与辐照后的传感器均保持了足够的性能，适用于追踪器应用。
• 传感器表现出足够的抗辐射能力，可满足LHC Phase-II探测器升级的要求。
• 本项目证实了在CMOS制造过程中通过拼接实现大面积传感器的可行性，未来将提交更优的传感器设计方案。