[论文解读] Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion

Ziqian Yao, Clarissa Daniel+6 more|arXiv (Cornell University)|Mar 19, 2026

Acoustic Wave Resonator Technologies被引用 0

一句话总结

该论文展示了首个基于单晶AlN晶圆的TE模态体声谐振器，用于压电功率转换，实现高Q值1677和k^2为6.1%，并通过接地环抑制杂模。

ABSTRACT

In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality factor ($Q$) of 1677 and an electromechanical coupling coefficient ($k^2$) of 6.1%, highlighting the strong potential of AlN resonators for efficient power conversion. To suppress in-band spurious modes, a grounded ring structure is proposed and experimentally validated. The measured frequency-domain impedance response shows a spurious suppression of the spectrum above the resonance at 13.52 MHz. A comparative analysis with prior PZT, LN, and LT-based resonators indicates that AlN achieves a competitive figure of merit and $f \cdot Q$ product, while its material thermal conductivity is orders of magnitude higher than that of the incumbent piezoelectric power-converter resonators. The power-handling capability is expected to be superior in AlN single-crystal wafers and will be demonstrated in ongoing experiments. These results suggest that AlN offers a promising platform for compact, robust piezoelectric power converters and next-generation power electronic systems.

研究动机与目标

• 展示基于单晶AlN晶圆的TE模态体声谐振器，用于压电功率转换。
• 量化机电性能（Q、k^2）及谐振特性。
• 评估带内杂模抑制效果，并将AlN性能与成熟的压电材料进行比较。
• 突出未来功率转换器的热特性与功率处理能力。

提出的方法

• 在单晶AlN晶圆上制备TE模态体声谐振器。
• 在频域对阻抗进行表征，识别谐振与杂模。
• 实现并验证接地环结构以抑制带内杂模。
• 测量3-dB串联谐振Q值和机电耦合系数k^2。
• 将AlN性能与PZT、LN、LT基准进行比较。

实验结果

研究问题

• RQ1 单晶AlN晶圆能否实现适用于压电功率转换的TE模态体声谐振器？
• RQ2 AlN TE模态谐振器可达到的Q值和k^2是多少？
• RQ3 AlN谐振器能否有效抑制带内杂模，接地环对光谱有何影响？
• RQ4 AlN的性能（f·Q乘积、功率处理潜力）与传统压电材料相比如何？

主要发现

• 实现了3-dB串联谐振Q值1677。
• 测得k^2为6.1%。
• 接地环结构抑制带内杂模，使共振频率以上频谱下降至13.52 MHz处。
• 相对于PZT、LN、LT的基准，AlN在f·Q和性能指标方面具竞争力。
• AlN的更高热导率提示在单晶晶圆中具更优的功率处理潜力。
• 结果表明AlN是实现紧凑、鲁棒的压电功率转换器的有前景的平台。