[论文解读] Sputtered 2D transition metal dichalcogenides: from growth to device applications

Merve Acar, Emre Gür|arXiv (Cornell University)|Sep 15, 2021

2D Materials and Applications参考文献 81被引用 15

一句话总结

本综述评估了溅射法作为一种可扩展、可靠的大型连续二维过渡金属二硫属化合物（TMDCs，如MoS2和WS2）生长方法，相较于传统的化学气相沉积（CVD）和机械剥离法具有显著优势。研究表明，溅射生长的TMDCs在场效应晶体管（迁移率约10–20 cm²/V·s，开关比约10²–10⁷）和光电探测器（探测灵敏度高达1.4 × 10¹⁴ Jones）中表现出可接受的器件性能，证明其在下一代纳米电子学与光电子学中的可行性。

ABSTRACT

Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS2 , WS2 , MoSe2 and WSe2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.

研究动机与目标

• 评估溅射法作为CVD和机械剥离法在二维TMDCs生长中的一种可扩展替代方案。
• 分析溅射TMDC基场效应晶体管（FETs）和光电探测器的性能表现。
• 识别可提升溅射TMDC薄膜晶体质量和化学计量比的生长策略。
• 评估溅射二维TMDCs在大规模电子与光电子应用中的工业潜力。

提出的方法

• 采用溅射作为主要沉积技术，在Si/SiO2基底上生长连续、大面积的二维TMDC薄膜。
• 使用两步溅射工艺以提高薄膜均匀性和结晶度，包括在氩气气氛中进行退火处理。
• 应用射频磁控溅射技术，实现对MoS2和WS2薄膜厚度与化学计量比的精确控制。
• 器件制造采用标准光刻工艺和热蒸发法在溅射TMDC沟道上制备源/漏电极。
• 电学表征包括转移特性和输出特性曲线，用于提取迁移率、开关比及栅压调制行为。
• 光电探测器性能通过在不同光波长和偏压条件下的响应度、探测灵敏度及上升/下降时间进行评估。

实验结果

研究问题

• RQ1 溅射能否生成足够结晶度的连续、大面积二维TMDC薄膜，以满足器件应用需求？
• RQ2 与CVD或机械剥离法制备的器件相比，溅射TMDC FET的迁移率和开关比性能如何？
• RQ3 哪些溅射策略（如两步法、退火处理）可提升溅射TMDC薄膜的质量与器件性能？
• RQ4 溅射TMDCs在响应度、探测灵敏度和响应速度方面的光电探测能力如何？
• RQ5 溅射TMDCs能否实现柔性且可扩展的光电探测器，以支持下一代光电子系统？

主要发现

• 溅射MoS2场效应晶体管的电子迁移率分别为2.2和5.1 cm²/V·s，开关比范围为10²至10⁷。
• 在相同基底上制备的WS2场效应晶体管在多组器件中表现出一致的性能，证实了工艺的可重复性。
• 通过直接溅射和800 °C退火制备的MoS2/Si异质结光电探测器探测灵敏度达1.45 × 10¹⁰ Jones，而Pd-MoS2/n-Si结构的探测灵敏度最高达1.0 × 10¹⁴ Jones。
• 通过电子束辐照在聚酰亚胺基底上制备的WS2薄膜，其响应度最高达53.3 A/W，探测灵敏度达1.22 × 10¹¹ Jones。
• 溅射TMDC光电探测器的响应时间在微秒量级，但下降时间通常更长，表明存在恢复限制。
• 目前报道的溅射TMDC光电探测器最高探测灵敏度达1.4 × 10¹⁴ Jones，与高质量CVD和机械剥离样品相当。