Hyun-woo Kim

Concerning the safety aspects of high-voltage Li-ion batteries, a pelletized hybrid solid electrolyte (HSE) was prepared by blending Li₇La₃Zr₂O₁₂ (LLZO) ceramic particles and an ionic liquid electrolyte (ILE) for use in pseudo-solid-state Li-ion batteries.

Structural analysis of protein-RNA complexes is labor-intensive, yet provides insight into the interaction patterns between a protein and RNA. As the number of protein-RNA complex structures reported has increased substantially in the last few years, a systematic method is required for automatically identifying interaction patterns. This paper presents a computational analysis of the hydrogen bonds in the most representative set of protein-RNA complexes. The analysis revealed several interesting

We explore the task of improving persona consistency of dialogue agents. Recent models tackling consistency often train with additional Natural Language Inference (NLI) labels or attach trained extra modules to the generative agent for maintaining consistency. However, such additional labels and training can be demanding. Also, we find even the bestperforming persona-based agents are insensitive to contradictory words. Inspired by social cognition and pragmatics, we endow existing dialogue agent

Advanced organic polymer electrode based on PTVE-functionalized carbon nanotubes is prepared for sodium organic battery.

In this work, a negative capacitance tunnel FET (NCTFET) with the tunneling current in the normal direction to the gate is proposed with channel doping engineering and its electrical characteristics are investigated using TCAD simulations with calibrated model parameters. The new NCTFET has a p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -doping (for n-type operations) in the channel overlap region, which plays a role to suppress the cor

In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations. The proposed L-shaped TFET has the pocket doping (p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -doping for n-type operations) underlying the gate, which can suppress the corner tunneling generated

In order to overcome the small current drivability of a tunneling field-effect transistor (TFET), we have introduced a TFET with the SiGe body and elevated Si drain region. The proposed TFET features large on-current and lower subthreshold swing (SS) compared with the Si TFET. Also, by using elevated Si drain region, it is expected that ambipolar current can be suppressed. Through the technology computer aided design (TCAD) simulation, the characteristics of the proposed TFET have been investiga

In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Als

We demonstrate tunnel FET (TFET)-based ternary CMOS (T-CMOS) which can operate at supplyvoltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> ) <; 0.6 V. The TFET T-CMOS consists of the vertical n/p TFETs and their drain current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> )-gate voltage(V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999

In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters. This new T-CMOS utilizes two different types of tunneling currents to form three different output voltage states: (1) source-to-drain tunneling current; and (2) conventional source-to-channel tunneling current. To form a half supply voltage (V <sub xmlns:mml="http://www.w3

Abstract This paper presents a digital microfluidic (DMF) platform based on a printed circuit board (PCB) for droplet mixing. Mixing droplets without a top cover plate is important for bio-chemical analysis. For this reason, a more efficient mixing method is required especially for mixing a viscous liquid droplet in an open surface. Here, to improve the performance of droplet mixing, we propose the integration of an acoustically oscillating bubble to an electrowetting-on-dielectric (EWOD) chip,

Background and ObjectiveaaFirefighters suffer from irregular and inadequate sleep, often due to their shift work schedule. The purpose of this study was to investigate the shift work schedules and their effects on the quality of sleep in Korean firefighters. MethodsaaThis study included firefighters in the Seoul Metropolitan area, who participated in the "Firefighters' Healing Camp" and answered questionnaires for their shift work schedules and sleeprelated symptoms. Among 180 participating fire

Abstract In this study, the body-bias effects on negative capacitance FET (NCFET) are analyzed using technology computer-aided design (TCAD) device simulation with drift-diffusion model and Landau-Khalatnikov. To understand the physical origin the effects, electrical characteristics are evaluated with various ferroelectric (FE) layer thickness for NCFET as compared to the conventional MOSFET. With thicker FE layer, the total capacitance ( C Total ) becomes larger, while MOS capacitance ( C MOS )