Jae Hyun Yang
Yonsei University · Engineering
About the Lab
Professor Jae Hyun Yang's research lab specializes in the development and optimization of advanced optoelectronic materials for sustainable energy applications, with a primary focus on perovskite and colloidal quantum dot (CQD) semiconductors. The lab explores fundamental materials science challenges such as phase control, defect passivation, and interfacial engineering to enhance the performance and stability of photovoltaic devices. By integrating high-throughput experimental workflows and advanced characterization techniques, the lab accelerates the discovery of composition-structure-property relationships in hybrid halide perovskites and CQD films. Their work bridges materials synthesis, nanoscale characterization, and device physics to enable next-generation, low-cost, and efficient solar energy technologies.
Research Overview
Research Output Trend
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Selected Papers
15Abstract Mixed cesium‐ and formamidinium‐based metal halide perovskites (MHPs) are emerging as ideal photovoltaic materials due to their promising performance and improved stability. While theoretical predictions suggest that a larger composition ratio of Cs (≈30%) aids the formation of a pure photoactive α‐phase, high photovoltaic performances can only be realized in MHPs with moderate Cs ratios. In fact, elemental mixing in a solution can result in chemical complexities with non‐equilibrium ph
Development of colloidal quantum dot (CQD) inks enables single-step spin-coating of compact CQD films of appropriate thickness, enabling the promising performance of CQD photovoltaics (CQDPVs). Today's highest-performing CQD inks rely on volatile <i>n</i>-butylamine (BTA), but it is incompatible with scalable deposition methods since a rapid solvent evaporation results in irregular film thickness with an uneven surface. Here, we present a hybrid solvent system, consisting of BTA and <i>N</i>,<i>
Single-layer graphene (SLG) was incorporated into ZnO nanoparticles (NPs), and use of this material in photovoltaic devices generated significant changes. The Fermi level of ZnO NPs underwent a downshift, whereas the conduction and valence bands were maintained with increasing SLG concentrations. Furthermore, the effective defect densities were reduced and carrier mobility was enhanced. Colloidal quantum dot photovoltaics (CQDPVs) with the SLG-incorporated ZnO NP layer as an electron transportin
Abstract Quasi‐2D metal halide perovskites (MHPs) are an emerging material platform for sustainable functional optoelectronics, but the uncontrollable, broad phase distribution remains a critical challenge for applications. Nevertheless, the basic principles for controlling phases in quasi‐2D MHPs remain poorly understood, due to the rapid crystallization kinetics during the conventional thin‐film fabrication process. Herein, a high‐throughput automated synthesis‐characterization‐analysis workfl
Abstract Unlike single‐component 2D metal halide perovskites (MHPs) exhibiting sharp excitonic photoluminescence (PL), a broadband PL emerges in mixed Pb‐Sn 2D lattices. Two physical models –self‐trapped exciton and defect‐induced Stokes‐shift – are proposed to explain this unconventional phenomenon. However, the explanations provide limited rationalizations without consideration of the formidable compositional space, and thus, the fundamental origin of broadband PL remains elusive. Herein, the
Efficient charge collection in photovoltaics is a key issue toward their high performance. Despite the promising performance of colloidal quantum dot (CQD)-based photovoltaics (CQDPVs), they suffer significant dissipation of photocurrent due to imperfect surface passivation of the CQD hole transport layer (HTL) by a single 1,2-ethaneditihol (EDT) ligand. To address the critical drawback of existing CQDPVs, we offer a hybrid passivation strategy, including both EDT and thiocyanate (SCN). The hybr
Abstract The bandgap and operation stability of metal halide perovskites (MHPs) based light‐emitting diodes (PeLEDs) have been compromised by the substantial surface defect densities in the matrix. Today's defect passivation strategies rely on coordination actions of small‐molecular and/or polymeric ligands, which effectively enhance the optical properties of materials. However, the non‐trivial insulating characteristics of the molecules concurrently sacrifice the operation stability and externa
Abstract The intriguing functionalities of emerging quasi‐2D metal halide perovskites (MHPs) have led to further exploration of this material class for sustainable and scalable optoelectronic applications. However, the chemical complexities in precursors—primarily determined by the 2D:3D compositional ratio—result in uncontrolled phase heterogeneities in these materials, which compromises the optoelectronic performances. Yet, this phenomenon remains poorly understood due to the massive quasi‐2D
Abstract Cesium‐based quasi‐2D halide perovskites (HPs) offer promising functionalities and low‐temperature manufacturability, suited to stable tandem photovoltaics. However, the chemical interplays between the molecular spacers and the inorganic building blocks during crystallization cause substantial phase complexities in the resulting matrices. To successfully optimize and implement the quasi‐2D HP functionalities, a systematic understanding of spacer chemistry, along with the seamless naviga
Abstract Nanoscopic packing structures crucially determine the charge conduction and the consequent functionalities of organic semiconductors including bulk heterojunctions (BHJs), which are dependent on various processing parameters. Today's high‐performance colloidal quantum dot photovoltaics (CQDPVs) employ functional organic semiconductors as a hole transport layer (HTL). However, the processing of those films replicates a protocol dedicated to high‐performance organic PVs, and thus little i
Abstract Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric‐semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal‐oxide‐semiconductor technology. Recent discoveries of ferroelectricity in binary oxides such as Zn
Research Areas
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