Jaegun Park

We investigated the effect of the thicknesses of the interface layers (here, PEDOT:PSS and LiF) of polymer photovoltaic cells because variations in thickness strongly affect the power conversion efficiency (PCE). It was observed that the PCE rapidly increased with a PEDOT:PSS thickness of up to ~2,000 rpm and rapidly decreased when the PEDOT:PSS was thicker than ~2,000 rpm. A PCE of 6.648% was obtained at a specific PEDOT:PSS layer thickness of ~2,000 rpm, about 41.5% (from 4.698 to 6.648%) high

In this study, the plasma-enhanced tetraethylorthosilicate (PETEOS) removal rate was investigated as a function of CeO2 crystallinity. Cerium-oxide powders were synthesized from different soluble salts by the solid-state displacement reaction and the wet chemical precipitation methods. The slurry analysis showed that with a weight fraction of 1 % of an anionic surfactant added to improve the dispersion stability by using the two methods had similar surface potentials and rheological behaviors. H

We present a novel quantum dot enhancement film (QDEF) with a remarkable RGB color gamut of over 100.4% (134.2%) of the Rec. 2020 standard (NTSC standard), respectively for a highresolution liquid-crystal display (LCD). Our efficient QDEF was fabricated by using a highly transparent resin incorporated with high photoluminesce-quantum yield (PL-QY) and narrow full width at half maximum CsPbBr1I2 QDs (Pr-QDs) and CdSe/ZnS QDs (Cd-QDs). The proposed PrCd- QDEF in a LCD with color filters rendered a

Aluminum-oxide (Al2O3) thin films were deposited using trimethylaluminum (TMA) as the Al source and an O2 plasma as the oxidant. The films were deposited by using electron cyclotron resonance plasma-enhanced atomic layer deposition (ECR-PEALD) at room temperature. This room-temperature deposition method is well suited for thermally fragile organic substrate devices. The growth rate was 2.2 A/cycle, and a density of 3.2 g/cm3 of Al2O3 was deposited at room temperature and a plasma power of 300 W.

The effect of the surface roughness of strained Si grown on relaxed SiGe-on-insulator on the electrical characteristics of n-MOSFETs was investigated. The surface roughness-induced degradations of the driving current and leakage current were minimized by applying, after conventional rapid thermal annealing (RTA), an additional furnace annealing consisting of 30 min in a N$_2$ ambient at 500 $^\circ$C. The improvements resulted from the post-RTA process decreasing the charge density of the interf

The eects of the abrasive size and the surfactant concentration in ceria slurry on the removal rates for oxide and nitride lms were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride lms decreased with increasing surfactant concentration. This result was qualitatively explained by using a model in which abrasive particles move through a viscous layer caused b

The purpose of this study was to reveal the mechanism of wafer touch polishing using a highpurity colloidal silica slurry containing organic surfactants such as hydroxyl-ethyl cellulose. The effect of the surfactant concentration on wafer touch polishing was studied to improve the roughness of wafer surfaces after polishing. The haze level and the micro-roughness decreased with decreasing surfactant concentration.|?

An Au : ultrathin Al layer is investigated as the anode for organic light-emitting devices (OLEDs). However, without surface modification of the Au or Au : ultrathin Al anode, the OLED usually exhibits poor performance. Therefore, to obtain good performance of OLED, we applied an O$_2$ plasma treatment after Al deposition on the Au anode. The O$_2$ plasma treatment of the ultrathin Al layer can greatly enhance the hole injection ability compared with anodes using only Au or Au : ultrathin Al wit

A Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultraviolet (EUV) re ective multilayer properties. The stacking status and optical properties were analyzed by using cross-sectional transmission electron microscopy (TEM), X-ray diraction (XRD), and EUV re ectometry. About 1.5 % improvement of peak re ectivity is speculated to originate from the diusion inhibition property of the Ru layer. An annealing test conrms the improved thermal stability, i.e. uniform and

The effect of co-evaporated tris(8-hydroxyquinolinato)aluminium:8-hydroxy-quinolinato lithium (Alq3:Liq) on the performance of a photovoltaic (PV) cell was investigated by characterizing the performance of a PV cell fabricated on poly (3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl- C61butyric-acidmethyl-ester (PCBM) bulk heterojunctions with Alq3:Liq as an exciton/holeblocking and electron-injection layer. Inserting Alq3:Liq layer into the PV cell strongly affected the power conversion effi

The hole mobility of p-metal-oxide-semiconductor field-effect transistors (MOSFETs) with a compressively-strained SiGe channel grown on a silicon-on-insulator (SOI) structure was investigated. In particular, the dependence of the mobility behavior on the effective field (Eeff ) was investigated by varying the Ge concentration in the SiGe layer. We observed that the mobility enhancement factor increased with both the Ge concentration and the Eeff . In addition, we confirmed that the hole mobility

The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as ~ 106 AC write/erase endurance cycles with 100-μs AC pulse width and a long retention time of ~ 7.4-

A transparent, conducting, double-layer metal electrode for use in transparent, organic light-emitting devices was fabricated. The electrode consists of thin layers of Al and Au metals of various thicknesses, deposited by using the vacuum thermal evaporation technique. Optical transmittances of 47.2 \%, 60.3 \%, and 57.1 \% were obtained for the R ($\lambda$ = 660 nm), G ($\lambda$ = 525 nm), and B ($\lambda$ = 470 nm) wavelengths, respectively, with a low electrical sheet resistance of $\sim$23

Recessed ultra-thin body (UTB) silicon-on-insulator (SOI) n-meta-oxide-semiconductor field-effect transistors (MOSFETs) with a top silicon thickness of less than 10 nm were successfully fabricated. We investigated the dependence of their electrical characteristics, such as subthreshold conduction and effective mobility, on the operating temperature the different channel thicknesses of less than 10 nm. In the case of a 4.5-nm-channel UTB SOI n-MOSFET, it was observed that as the temperature rises

Effects of the triethanolamine (TEA) concentration in a ceria slurry on the removal rates and the removal selectivity of SiO2 and Si3N4 films were investigated by performing shallow trench isolation chemical mechanical polishing (STI-CMP). At a higher concentration of TEA in the polishing slurry, the removal rate of the Si3N4 film significantly decreased while maintaining a high removal rate of the SiO2 film with a high removal selectivity of the SiO2-to-Si3N4 films during the CMP process. We fo