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Kwang Hyung Lee

Korea Advanced Institute of Science and Technology · Engineering

About the Lab

Professor Kwang Hyung Lee's research lab specializes in the development of two-dimensional (2D) semiconductor-based electronic and optoelectronic devices, with a focus on molybdenum disulfide (MoS₂) and organic-inorganic hybrid heterostructures. The lab explores high-performance field-effect transistors, nonvolatile ferroelectric memory devices, and flexible thin-film transistors, emphasizing low-voltage operation, high mobility, and excellent retention characteristics. Key research directions include interface engineering, energy bandgap tuning via layer control, and the integration of 2D materials with ferroelectric polymers such as P(VDF-TrFE) for next-generation memory and sensing applications.

2D semiconductorsferroelectric memoryMoS2 transistorsflexible electronicshybrid heterostructures

Research Overview

Papers
194
Total Citations
6,194
Papers (5y)
6
Primary Field
Engineering

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
6total
2021
2022
2023
2024
2025
Citations per year (5y)
30total
20212022202320242025

Selected Papers

15
1
Article|1,335 citations·2012
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
Kwang H. Lee, Sung‐Wook Min, Youn-Gyung Chang, Min Kyu Park, Taewook Nam, Hyungjun Kim, Jae Hoon Kim, Sunmin Ryu, Seongil Im
SJR Q1Nano Letters

We report on the fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode. Our devices with triple MoS(2) layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS(2) layers. The photoelectric probing on working transistors with the nanosheet

Materials ChemistryMaterials Science
2
Article|246 citations·2012
MoS2 Nanosheets for Top‐Gate Nonvolatile Memory Transistor Channel
Kwang H. Lee, Sung‐Wook Min, Min Kyu Park, Young Tack Lee, Pyo Jin Jeon, Jaehoon Kim, Sunmin Ryu, Seongil Im
SJR Q1Small

Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(V·s). Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such

Materials ChemistryMaterials Science
3
Article|127 citations·2009
High‐Mobility Nonvolatile Memory Thin‐Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels
Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im, Sung‐Min Yoon
SJR Q1Advanced Materials

Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

Biomedical EngineeringEngineering
4
Article|103 citations·2015
Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed
Kwang H. Lee, Seung Su Baik, Kimoon Lee, Sung‐Wook Min, Pyo Jin Jeon, Jin Sung Kim, Kyujin Choi, Hyoung Joon Choi, Jae Hoon Kim, Seongil Im
SJR Q1ACS Nano

Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-

Materials ChemistryMaterials Science
5
Article|99 citations·2009
Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer
Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im
SJR Q1Applied Physics Letters

We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1–0.18 cm2/V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5–8 V and also exhibits WR-ER curre

Biomedical EngineeringEngineering
6
Article|81 citations·2004
A cluster validation index for GK cluster analysis based on relative degree of sharing
Young‐Il Kim, Dae‐Won Kim, Doheon Lee, Kwang H. Lee
SJR Q1Information Sciences
Artificial IntelligenceComputer Science
7
Article|31 citations·2015
Few‐Layer MoS2–Organic Thin‐Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate
Kwang H. Lee, Jae Min Shin, Pyo Jin Jeon, Junyeong Lee, Jin Sung Kim, Hyun Chul Hwang, Eunyoung Park, Woojin Yoon, Sang‐Yong Ju, Seongil Im
SJR Q1Small

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel.

Materials ChemistryMaterials Science
8
Article|28 citations·2007
Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric
Kwang H. Lee, Jeong-M. Choi, Seongil Im, Byoung H. Lee, Kyo Keun Im, Myung Mo Sung, Seungjun Lee
SJR Q1Applied Physics Letters

The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13nm-thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (AlOx)-self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+-Si substrate. The AlOx-SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233nF∕cm2 on ITO glass and on n+-Si substrate, respectively, along with a high dielectric strength of 4MV∕cm in both cases.

Electrical and Electronic EngineeringEngineering
9
Article|24 citations·2020
Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing
Kwang H. Lee, Yongmin Baek, Qiubao Lin, Joseph Minsu Chen, Minseong Park, Doeon Lee, Sihwan Kim, Kyusang Lee
SJR Q1Advanced Intelligent SystemsOA

Defect identification has been a significant task in various fields to prevent the potential problems caused by imperfection. There is great attention for developing technology to accurately extract defect information from the image using a computing system without human error. However, image analysis using conventional computing technology based on Von Neumann structure is facing bottlenecks to efficiently process the huge volume of input data at low power and high speed. Herein efficient defec

Electrical and Electronic EngineeringEngineering
10
Article|21 citations·2003
Ranking the sequences of fuzzy values
Seungsoo Lee, Kwang H. Lee, Doheon Lee
SJR Q1Information Sciences
Management Science and Operations ResearchDecision Sciences
11
Article|15 citations·1995
Traffic Control of Intersection Group based on Fuzzy Logic
Kwang-Hyung Lee
Control and Systems EngineeringEngineering
12
Article|14 citations·2015
Model Tests on Dredged Soil–Filled Geocontainers Used as Containment Dikes for the Saemangeum Reclamation Project in South Korea
Hyeong-Joo Kim, Myoung-Soo Won, Kwang-Hyung Lee, Jay C. Jamin
SJR Q1International Journal of Geomechanics

A geotextile tube is a type of geocontainer typically filled with sandy slurries and fine-grained dredged sediments. Its performance in strength, dewatering, fine-particle retention, and stacked stability has been studied extensively. However, very little is understood about the shape-deformation behavior of geotextile tubes. In this paper, slurry-settlement, constant head permeability, and seepage-force tests were conducted to determine the geocontainers’ geotechnical design parameters. The cha

Civil and Structural EngineeringEngineering
13
Article|14 citations·2010
Inference of combinatorial Boolean rules of synergistic gene sets from cancer microarray datasets
In Ho Park, Kwang H. Lee, Doheon Lee
SJR Q1BioinformaticsOA

MOTIVATION: Gene set analysis has become an important tool for the functional interpretation of high-throughput gene expression datasets. Moreover, pattern analyses based on inferred gene set activities of individual samples have shown the ability to identify more robust disease signatures than individual gene-based pattern analyses. Although a number of approaches have been proposed for gene set-based pattern analysis, the combinatorial influence of deregulated gene sets on disease phenotype cl

Molecular BiologyBiochemistry, Genetics and Molecular Biology
14
Article|13 citations·2011
An Almost Transparent Image Pixel with a Pentacene/ZnO Photodiode, a Pentacene Thin‐Film Transistor, and a 6,13‐Pentacenequinone Phosphor Layer
Kwang H. Lee, Kwang H. Lee, Kimoon Lee, Taewoo Ha, Jae Hoon Kim, Seongil Im
SJR Q1Advanced Materials

An almost transparent image pixel on glass is demonstrated for the first time under visible and UV illumination at 3 V. The pixel is composed of a pentacene thin-film transistor and a serially connected pentacene/ZnO photodiode, with or without a 6,13-pentacenequinone phosphor layer that was deposited on the photodiode for more efficient light detection.

Electrical and Electronic EngineeringEngineering
15
Article|8 citations·2015
Inference of brain pathway activities for Alzheimer's disease classification
Jongan Lee, Young‐Hoon Kim, Yong Jeong, Duk L. Na, Jong‐Won Kim, Kwang H. Lee, Doheon Lee
SJR Q1BMC Medical Informatics and Decision MakingOA

BACKGROUND: Alzheimer's disease (AD) is a neurodegenerative and progressive disorder that results in brain malfunctions. Resting-state (RS) functional magnetic resonance imaging (fMRI) techniques have been successfully applied for quantifying brain activities of both Alzheimer's disease (AD) and amnestic mild cognitive impairment (aMCI) patients. Region-based approaches are widely utilized to classify patients from cognitively normal subjects (CN). Nevertheless, region-based approaches have a fe

Cognitive NeuroscienceNeuroscience

Research Areas

Electrical and Electronic EngineeringMaterials ChemistryArtificial IntelligenceMolecular BiologyBiomedical EngineeringInformation Systems

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