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Min-Hyuk Lim

Ulsan National Institute of Science and Technology · Materials Science

About the Lab

Professor Min-Hyuk Lim's research lab specializes in the development of novel metal-organic precursors for atomic layer deposition (ALD) and metal-organic chemical vapor deposition (MOCVD) of high-quality oxide thin films. The lab focuses on designing and synthesizing heteroleptic transition metal alkoxides—particularly titanium-based complexes with tailored ligands—to achieve precise control over film composition, growth kinetics, and crystallinity. Their work targets applications in advanced electronic, photonic, and catalytic devices, emphasizing materials for next-generation semiconductors and energy-related technologies.

MOCVD precursorstitanium alkoxidesthin film depositionALDfunctional oxides

Research Overview

Papers
2
Total Citations
9
Papers (5y)
2
Primary Field
Materials Science

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
2total
2016
2018
Citations per year (5y)
9total
20162018

Selected Papers

2
1
Article|5 citations·2016
Size control of monodisperse hollow ORMOSIL particles using a self-emulsion process
Gyu Il Jung, Euk Hyun Kim, Min Hyuk Lim, Sang Man Koo
SJR Q1Journal of Industrial and Engineering Chemistry
Materials ChemistryMaterials Science
2
Article|4 citations·2018
Synthesis and characterization of heteroleptic titanium MOCVD precursors for TiO2 thin films
Euk Hyun Kim, Min Hyuk Lim, Myoung Soo Lah, Sang Man Koo
SJR Q2Dalton Transactions

Heteroleptic titanium alkoxides with three different ligands, <italic>i.e.</italic>, [Ti(O<sup>i</sup>Pr)(X)(Y)] (X = tridentate, Y = bidentate ligands), were synthesized to find efficient metal organic chemical vapor deposition (MOCVD) precursors for TiO<sub>2</sub> thin films.

Materials ChemistryMaterials Science

Research Areas

Materials Chemistry

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