Min Woo Ryu

We report a high-performance plasmonic terahertz (THz) detector based on an antenna-coupled asymmetric FET by using the 65-nm CMOS technology. By designing an asymmetric FET on a self-aligned poly-Si gate structure, more enhanced channel charge asymmetry between the source and the drain has been obtained in comparison with the nonself-aligned metal gate structure of our previous paper. In addition, using a vertically integrated patch antenna, which is designed for a 0.2-THz resonance frequency,

We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<;1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFE

We report the experiments of a plasmonic terahertz (THz) wave detector based on silicon (Si) field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. To investigate the effects of the overdamped charge asymmetry on responsivity ( R V ), a FET structure with the asymmetric source and drain area under the gate has been proposed. R V as a function of gate voltage in Si FET-based detectors integrated with an antenna has been successfully enhanced by the asymmetry ratio (η a = W D

A compact monolithic trantenna ( <underline xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tran</u> sistor-an <underline xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tenna</u> ) device is presented for a high-performance sub-THz wave detector using 28-nm CMOS foundry process. Based on a highly localized plasmonic wave in a silicon nano-ring field-effect transistor (FET), we obtained a total 535-fold photoresp

The performance uniformity of each pixel integrated with a patch antenna in a terahertz plasmon detector array is very important in building the large array necessary for a real-time imaging system. We found a parasitic antenna effect in the terahertz plasmon detector whose response is dependent on the position of the detector pixel in the illumination area of the terahertz beam. It was also demonstrated that the parasitic antenna effect is attributed to the physical structure consisting of sign

In this paper, we present the validity and potential capacity of a modeling and simulation environment for the nonresonant plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided design (TCAD) platform. The nonresonant and “overdamped” plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Bas

We demonstrate a record-high performance monolithic trantenna (transistor-antenna) using 65-nm CMOS foundry in the field of a plasmonic terahertz (THz) detector. By applying ultimate structural asymmetry between source and drain on a ring FET with source diameter <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(d_{\text{S}})$</tex> scaling from 30 to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.3

We report a circular-shape monolithic transistor-antenna (trantenna) for high-performance plasmonic terahertz (THz) detector. By designing an asymmetric transistor on a ring-type metal-gate structure, more enhanced (45 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular patch antenna, which is designed for a 0.12-THz resonance frequency, we demon

This article reports a novel monolithic circular transistor-antenna by designing a ring-type asymmetric field-effect transistors (FET) itself as a receiving antenna element for high-performance plasmonic millimeter-wave detectors. Operation principle of the proposed device is discussed, focusing on how signal transmission through the ring-type structure is available without any feeding line between the antenna and the detector. To determine the antenna geometry aiming for a desired resonant freq

We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</sub> ) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain st

Since the semiconductor industry has entered the hyper-scaling era, which requires a technology to itself appropriately to meet the demands of data-intensive computing, binary Boltzmann transistor is facing the integration density limits [1]. One efficient approach to overcome this challenge is the ternary system, where system complexity can be reduced to 63.1% of binary one [2]. Recently, various research efforts of ternary devices have been proposed [3]–[5]. However, these studies have not ver

Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> based on silicon nanowire structure.

In principle, the photoresponse can be enhanced by scaling down the gate oxide thickness (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> ), which is a key structural parameter for the channel 2DEG density modulation. By using our TCAD simulation framework, we found that the enhanced photoresponse by reducing t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> has been originated from

We report the nonresonant plasmonic terahertz (THz) wave detector based on the silicon (Si) field effect transistor (FET) with a technology computer-aided design (TCAD) platform. The plasma wave behavior has been modeled by a quasi-plasma electron box as a two-dimensional electron gas (2DEG) in the channel of the FET. The incoming alternating current (AC) signal as the THz wave radiation can induce the direct-current (DC) voltage difference between the source and drain, which is called the photo