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Sung Mi Kim

Ewha Womans University · Physics and Astronomy

About the Lab

Professor Sung Mi Kim's research lab specializes in advanced III-V semiconductor materials and devices, with a primary focus on quantum dot and quantum well structures for optoelectronic and infrared detection applications. Key research directions include the development of high-performance InGaAs quantum dot lasers, multi-spectral quantum dot infrared photodetectors, and lattice-matched III-N-As-based materials for long-wavelength emission. The lab also explores strain engineering and novel alloy systems such as GaInNAsSb to extend emission wavelengths while maintaining high efficiency and material quality.

quantum dotsinfrared photodetectorsIII-V semiconductorsoptoelectronic deviceslaser materials

Research Overview

Papers
21
Total Citations
236
Papers (5y)
16
Primary Field
Physics and Astronomy

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
16total
2005
2008
2013
2025
2026
Citations per year (5y)
43total
20052008201320252026

Selected Papers

15
1
Article|97 citations·2004
High-Frequency Modulation Characteristics of 1.3->tex< muhboxm >/tex<InGaAs Quantum Dot Lasers
S.M. Kim, Yingmin Wang, M. Keever, J. S. Harris
SJR Q2IEEE Photonics Technology Letters

We report results of small-signal modulation characteristics of self-assembled 1.3-μm InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide lasers were fabricated with multistack InGaAs self-assembled QDs in active region. A high characteristic temperature of T/sub o/=210 K with threshold current density of 200A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> was obtained. Small-signal modulation bandwidth of

Atomic and Molecular Physics, and OpticsPhysics and Astronomy
2
Article|71 citations·2002
GaInNAsSb for 1.3-1.6-μm-long wavelength lasers grown by molecular beam epitaxy
Vincent Gambin, Wonill Ha, Mark A. Wistey, H. B. Yuen, Seth R. Bank, S.M. Kim, J. S. Harris
SJR Q1IEEE Journal of Selected Topics in Quantum Electronics

High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths whil

Atomic and Molecular Physics, and OpticsPhysics and Astronomy
3
Article|24 citations·2004
Multicolor InGaAs Quantum-Dot Infrared Photodetectors
S.M. Kim, J. S. Harris
SJR Q2IEEE Photonics Technology Letters

We report two-color InGaAs quantum-dot infrared photodetectors. The InGaAs self-assembled quantum dots were grown on InGaP matrix via metal-organic chemical vapor deposition and fabricated as intersubband photoconductive structure. Bias-controlled two-color photoconductive responses were obtained at two different infrared window, mid-infrared of /spl lambda/=5.5 μm and far-infrared of /spl lambda/=9.2 μm at 77 K. Our devices were operated with low dark currents and high optical gains, and result

Atomic and Molecular Physics, and OpticsPhysics and Astronomy
4
Article|21 citations·2013
Enhanced fabrication process of zinc oxide nanowires for optoelectronics
C. García‐Núñez, J. L. Pau, E. Ruı́z, Antonio García Marín, B.J. Garcı́a, J. Piqueras, Guozhen Shen, David S. Wilbert, S.M. Kim, Patrick Kung
SJR Q2Thin Solid Films
Materials ChemistryMaterials Science
5
Article|14 citations·2013
Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy
C. García‐Núñez, Alejandro F. Braña, J. L. Pau, D. Ghiţǎ, B.J. Garcı́a, Guozhen Shen, David S. Wilbert, S.M. Kim, Patrick Kung
SJR Q2Journal of Crystal Growth
Biomedical EngineeringEngineering
6
Article|7 citations·2008
Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy
S.M. Kim, H. B. Yuen, Fariba Hatami, Alex Chin, J. S. Harris
SJR Q2Journal of Electronic Materials
Atomic and Molecular Physics, and OpticsPhysics and Astronomy
7
Article|1 citations·2004
Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications
S.M. Kim, J. S. Harris

This study demonstrates multi-spectral operation of InGaAs quantum dot infrared photodetectors that display peak responsivity and peak detectivity at 77 K. The applications of multi-spectral infrared sensors are also discussed in detail.

Electrical and Electronic EngineeringEngineering
8
Article|1 citations·2026
Barriers to and Facilitators of Implementing Suicide Risk Screening in Pediatric Primary Care: A Qualitative Study
Erin Orlins, Katherine Winner, Shilpa Sangvai, Amanda J. Thompson, Alice A. Gaughan, Delaney Marsalek, Xiaodan Hu, S.M. Kim, Jeffrey A. Bridge, Cynthia A. Fontanella, Ann Scheck McAlearney
SJR Q1Academic PediatricsOA

OBJECTIVE: Universal suicide risk screening in pediatric primary care settings is lacking, despite the endorsement of this practice by several national organizations. This study explores barriers to and facilitators of implementing universal suicide risk screening in pediatric primary care clinics, with a focus on clinics that had not yet adopted this practice. METHODS: We conducted a qualitative study consisting of semistructured interviews with primary care clinicians and support staff involve

Clinical PsychologyPsychology
9
Article|0 citations·2008
Optical Properties of Closely Coupled Dilute Nitride Mid-Infrared InNSb Quantum Dots
S.M. Kim, Fariba Hatami, H. Yuen, Alex Chin, Patrick Kung, J. S. Harris

We report the growth and characterization of a new dilute nitride, InNSb quantum dots embedded on both InAs and GaAs substrate. Strain induced, self-assembled quantum dots are grown using solid-source molecular beam epitaxy. For improved growth control, we developed a growth technique similar to atomic layer epitaxial methods. Nitrogen incorporation during formation of quantum dots changes surface energy barrier and causes anisotropic distribution of strain energy, results in formation of closel

Atomic and Molecular Physics, and OpticsPhysics and Astronomy
10
Article|0 citations·2026
Characterization of vertical AZO/p-GaN/n-GaN heterojunction bipolar transistor
S.M. Kim, Goeun Bang, Dong Hoe Kim, Taenam Kwon, Jongseob Kim, Kyoung-Kook Kim, Dong Yeong Kim, J. Y. Cho
SJR Q1Applied Physics Letters

Vertical device architectures are attracting attention for power electronics applications owing to their high current capabilities and space-efficient layouts. In this study, we demonstrate a GaN-based vertical heterojunction bipolar transistor employing aluminum-doped zinc oxide (AZO) as the collector layer, deposited by radio frequency sputtering at a low temperature. This low-temperature process avoids thermal damage to the underlying p-GaN base layer and provides a fabrication-compatible rou

Condensed Matter PhysicsPhysics and Astronomy
11
Article|0 citations·1988
Target and X-ray detector considerations in low-duty and intense pulse electro-channeling experiments
S.M. Kim
SJR Q2IEEE Transactions on Nuclear Science

The use of the Stanford Mark III electron accelerator presents special difficulties for channeling experiments due to its low-duty factor pulses. To compensate for the low-duty cycle of the channeled electron beam, the author utilized the high average current generated by the accelerator and analyzed the X-ray output using a turnable X-ray monochromator and a semiconductor detector operating in the current mode, rather than in the normal pulse mode. Cooling of the specimen was achieved by using

Electrical and Electronic EngineeringEngineering
12
Article|0 citations·2005
Characteristics of long wavelength quantum dots lasers
S.M. Kim, J. S. Harris

In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room temperature under CW biasing condition with a network analyzer (HP8510), a high speed InGaAs photodetector, and a low-noise amplifier.

Atomic and Molecular Physics, and OpticsPhysics and Astronomy
13
Article|0 citations·2025
Low-Intensity Exporters and Trade Patterns: Insights From Korea
김성미

The theoretical literature on heterogeneous firms and trade explains how differences in productivity determine which firms enter export markets. Yet even among exporters, productivity varies considerably: some firms export multiple products to numerous destinations, while others export a single product to only one market. This paper focuses on the latter group – marginal or low-intensity exporters – offering a descriptive analysis to better understand how productivity shapes export behavior beyo

14
Article|0 citations·2026
Model-driven learning-based message passing algorithm for MIMO systems
Saleem Ahmed, S.M. Kim
SJR Q2Telecommunication Systems
Electrical and Electronic EngineeringEngineering
15
Article|0 citations·2026
Reliability and Validity of the Korean Version of the Digital Health Literacy Instrument
J. H. Lee, Chulwoo Ahn, Jisun Park, S.M. Kim, Yerim Kim, Jiwon Park, Jaeyong Shin
SJR Q2Journal of Korean Medical ScienceOA

The K-DHLI is a reliable and valid instrument for assessing DHL in the Korean population. The findings confirm that the 7-factor structure demonstrates superior model fit and further support its applicability across diverse adult groups. This study provides a standardized instrument for assessing DHL in Korea and facilitates its use in national surveys, clinical screening, and research. It may help identify individuals with limited DHL, thereby supporting targeted interventions to reduce health

General Health ProfessionsHealth Professions

Research Areas

Atomic and Molecular Physics, and OpticsElectrical and Electronic EngineeringAerospace EngineeringCondensed Matter PhysicsMaterials ChemistryBiomedical Engineering

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